APTGF165A60D1G Phase leg NPT IGBT Power Module Q1 3 4 5 Q2 1 6 7 2 VCES = 600V IC = 165A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M5 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Reverse Bias Safe Operating Area Tj = 125°C 400A@420V TC = 25°C TC = 80°C TC = 25°C Unit V A V W December, 2009 IC Max ratings 600 230 165 400 ±20 781 RBSOA Parameter Collector - Emitter Breakdown Voltage These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTGF165A60D1G – Rev 2 Symbol VCES APTGF165A60D1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min Tj = 25°C Tj = 125°C Tj = 25°C VGE = 15V IC = 200A Tj = 125°C VGE = VCE , IC = 4 mA VGE = 20V, VCE = 0V Typ VGE = 0V VCE = 600V 1.95 2.2 4.5 Max 250 500 2.45 Unit µA V 6.5 400 V nA Max Unit Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn on energy Eoff Turn off energy Isc Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=15V, IC=200A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 200A RG = 16Ω Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 200A RG = 16Ω VGE = ±15V Tj = 125°C VBus = 300V IC = 200A Tj = 125°C RG = 16Ω VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C Min Test Conditions Min 600 Typ 9000 800 pF 650 nC 150 72 530 ns 40 160 75 550 ns 50 9 mJ 8.5 900 A Reverse diode ratings and characteristics IF Maximum Reverse Leakage Current VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery time Qrr Reverse Recovery Charge Err Reverse Recovery Energy IF = 200A VGE = 0V IF = 200A VR = 300V di/dt =3500A/µs www.microsemi.com Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Max 100 500 200 1.25 1.2 150 250 13 20 2.9 5.7 Unit V µA A 1.6 V December, 2009 IRM Typ ns µC mJ 2-4 APTGF165A60D1G – Rev 2 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGF165A60D1G Thermal and package characteristics Symbol Characteristic Min RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 -40 -40 -40 2 3 Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight Typ IGBT Diode For terminals To Heatsink M5 M6 Max 0.16 0.30 Unit °C/W V 150 125 125 3.5 5 180 °C N.m g D1 Package outline (dimensions in mm) Typical Performance Curve 60 50 ZVS 40 300 ZCS 30 hard switching 20 200 TJ=125°C TJ=25°C 100 10 0 0.3 200 0 250 0.3 0.6 0.9 VF (V) 1.2 1.5 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.35 0.25 100 150 IC (A) December, 2009 50 Diode 0.9 0.7 0.2 0.15 0.1 0.05 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) www.microsemi.com 1 10 3-4 APTGF165A60D1G – Rev 2 0 0 Thermal Impedance (°C/W) Forward Characteristic of diode 400 VCE=300V D=50% RG=16Ω TJ=125°C TC=75°C IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 70 APTGF165A60D1G Output Characteristics (VGE=15V) Output Characteristics 400 400 TJ = 125°C VGE=15V TJ=25°C 300 TJ=125°C IC (A) IC (A) 300 200 VGE=20V VGE=12V 200 VGE=9V 100 100 0 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 0 20 300 3 VCE (V) VCE = 300V VGE = 15V RG = 16 Ω TJ = 125°C 15 E (mJ) IC (A) 2 4 5 Energy losses vs Collector Current Transfert Characteristics 400 1 200 Eon Eoff 10 TJ=125°C Err 5 100 TJ=25°C 0 0 5 6 7 8 9 10 11 0 12 100 200 Switching Energy Losses vs Gate Resistance 30 25 Eon 400 Eoff 15 IC (A) E (mJ) 20 400 Reverse Safe Operating Area 500 VCE = 300V VGE =15V IC = 200A TJ = 125°C 300 IC (A) VGE (V) 10 5 300 200 VGE=15V TJ=125°C RG=16 Ω 100 Err 0 0 0 20 40 60 Gate Resistance (ohms) 80 0 100 200 300 400 500 600 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.12 0.09 0.06 0.03 0.9 IGBT 0.7 0.5 0.3 December, 2009 0.15 0.1 0 0.00001 Single Pulse 0.05 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTGF165A60D1G – Rev 2 Thermal Impedance (°C/W) 0.18