isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD787 DESCRIPTION ·DC Current Gain: hFE= 40~250(Min)@ IC= 0.2A ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 60V(Min) ·Complement to type BD788 APPLICATIONS ·Designed for low power audio amplifier and low current, high-speed switching applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 80 V 60 V 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 15 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 8.34 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD787 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 0.4 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 0.6 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 0.8 V VCE(sat)-4 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A 2.0 V VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 3V 1.8 V ICEX Collector Cutoff Current VCB= 80V;VBE(off)= 1.5V VCB= 40V;VBE(off)= 1.5V;TC=125℃ 1.0 0.1 μA mA ICEO Collector Cutoff Current VCE= 30V; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 μA hFE-1 DC Current Gain IC= 0.2A; VCE= 3V 40 hFE-2 DC Current Gain IC= 1A; VCE= 3V 25 hFE-3 DC Current Gain IC= 2A; VCE= 3V 20 hFE-4 DC Current Gain IC= 4A; VCE= 3V 5 Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 50 Collector Output Capacitance IE= 0; VCB= 10V; f= 0.1MHz fT COB CONDITIONS B B n c . i m e B s c s .i B 2 TYP. MAX 60 B w w w isc Website：www.iscsemi.cn MIN UNIT V 250 MHz 50 pF