isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD906 DESCRIPTION ·DC Current Gain : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -45V(Min) ·Complement to Type BD905 APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT -45 V ww w IC Collector Current-Continuous ICM Collector Current-Peak V -5 V -15 A -20 A -5 A IB Base Current PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range n c . i m e s c s .i -45 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.38 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD906 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2.5A -3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -2.5A -2.5 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -4V -1.5 V ICBO Collector Cutoff Current VCB= -45V; IE= 0 -0.5 mA ICEO Collector Cutoff Current -1.0 mA IEBO Emitter Cutoff Current -1.0 mA hFE-1 DC Current Gain hFE-2 hFE-3 fT CONDITIONS m e s isc VCE= -30V; IB= 0 B MAX -45 B w. w w MIN n c . i VEB= -5V; IC= 0 V IC= -0.5A; VCE= -4V 40 250 DC Current Gain IC= -5A; VCE= -4V 15 150 DC Current Gain IC= -10A ; VCE= -4V 5 Current-Gain—Bandwidth Product IC= -0.5A; VCE= -4V; ftest= 1.0MHz isc Website：www.iscsemi.cn 2 3.0 UNIT MHz