isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C ·Complement to Type BDT32/A/B/C APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER VALUE BDT31 80 BDT 31A 100 BDT 31B 120 BDT 31C 140 BDT31 40 BDT 31A 60 BDT 31B 80 BDT 31C 100 Collector-Base Voltage UNIT V Collector-Emitter Voltage V Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A IB Base Current 1 A PC Collector Power Dissipation TC=25℃ 40 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 3.12 ℃/W 70 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT31/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT31 VCEO(SUS) Collector-Emitter Sustaining Voltage MIN TYP. MAX UNIT 40 BDT 31A 60 IC= 30mA; IB= 0 V BDT 31B 80 BDT 31C 100 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A 1.2 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 4V 1.8 V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 0.2 mA ICEO Collector Cutoff Current 0.1 mA 0.2 mA B BDT31/A VCE= 30V; IB= 0 BDT31B/C VCE= 60V; IB= 0 B B IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 4V 25 hFE-2 DC Current Gain IC= 3A ; VCE= 4V 10 Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 3 fT 50 MHz Switching Times ton Turn-On Time toff Turn-Off Time 0.3 μs 1.0 μs IC= 1.0A; IB1= -IB2= 0.1A isc Website：www.iscsemi.cn