isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDV64/A/B/C DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Saturation Voltage: VCE(sat)= -2.0V(Max.)@ IC= -5A ·Complement to Type BDV65/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage VALUE BDV64 -60 BDV64A -80 BDV64B -100 n c . i m e V s c s i . w BDV64C -120 BDV64 -60 w w Collector-Emitter Voltage UNIT BDV64A -80 BDV64B -100 BDV64C -120 V Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -15 A IB Base Current-Continuous -0.5 A PC Collector Power Dissipation @ TC=25℃ Collector Power Dissipation @ Ta=25℃ B TJ Tstg 125 W 3.5 150 ℃ -65~150 ℃ Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35.7 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDV64/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-Emitter Breakdown Voltage CONDITIONS MIN BDV64 -60 BDV64A -80 TYP. MAX IC= -30mA; IB= 0 UNIT V BDV64B -100 BDV64C -120 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA -2.0 V VBE(on) Base-Emitter On Voltage IC= -5A; VCE= -4V -2.5 V ICEO Collector Cutoff Current VCE= 1/2VCEOmax; IB= 0 -2.0 mA -2.0 mA -0.4 mA -5 mA BDV64 B s c s .i BDV64A ICBO w w w Collector Cutoff Current BDV64B BDV64C n c . i m e VCB= -40V; IE= 0;TJ= 150℃ VCB= -50V; IE= 0;TJ= 150℃ VCB= -60V; IE= 0;TJ= 150℃ VCB= -70V; IE= 0;TJ= 150℃ ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -5A; VCE= -4V isc Website：www.iscsemi.cn 2 1000