isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min)@ IC= 2A ·Complement to Type BDW24/A/B/C APPLICATIONS ·Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCER VCEO VEBO PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage VALUE BDW23 45 BDW23A 60 BDW23B 80 BDW23C 100 BDW23 45 BDW23A 60 BDW23B 80 BDW23C 100 UNIT V V Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 0.2 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn BDW23/A/B/C isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDW23/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDW23 V(BR)CEO Collector-Emitter Breakdown Voltage MIN TYP. MAX UNIT 45 BDW23A 60 IC= 100mA ;IB=0 V BDW23B 80 BDW23C 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 8mA 2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 60mA 3 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 8mA 2.5 V VBE(on)-1 Base-Emitter On Voltage IC= 1A ; VCE= 3V 2.5 V VBE(on)-2 Base-Emitter On Voltage IC= 6A ; VCE= 3V 3 V C-E Diode Forward Voltage IF= 2A 1.8 V 0.5 mA 0.2 mA 2 mA VECF ICEO ICBO Collector Cutoff Current Collector Cutoff Current B B B BDW23 VCE= 22V; IB= 0 BDW23A VCE= 30V; IB= 0 BDW23B VCE= 40V; IB= 0 BDW23C VCE= 50V; IB= 0 BDW23 VCB= 45V;IE= 0 BDW23A VCB= 60V;IE= 0 BDW23B VCB= 80V;IE= 0 BDW23C VCB= 100V;IE= 0 B B B B IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 1A ; VCE= 3V 1000 hFE-2 DC Current Gain IC= 2A ; VCE= 3V 750 hFE-3 DC Current Gain IC= 6A ; VCE= 3V 100 isc Website：www.iscsemi.cn 2 20000