TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 Devices Qualified Level 2N4150 2N4150S 2N5237 2N5237S JAN JANTX JANTXV 2N5238 2N5238S MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Junction Temp. Range 2N4150 2N5237 2N5238 Symbol 2N4150S 2N5237S 2N5238S Unit VCEO VCBO VEBO IC 70 100 PT TJ, Tstg 120 150 10 10 1.0 5.0 -65 to +200 170 200 Vdc Vdc Vdc Adc TO- 5* 2N4150, 2N5237, 2N5238 W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) 2) Symbol RθJC RθJA Max. 0.020 Unit 0 0.175 C/mW Derate linearly @ 5.7 mW/0C for TA > +250C Derate linearly @ 50 mW/0C for TC > +250C TO-39* (TO-205AD) 2N4150S, 2N5237S, 2N5238S *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit V(BR)EBO 7.0 Vdc 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S V(BR)CEO 70 120 170 Vdc 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S ICEX OFF CHARACTERISTICS Emitter-Base Breakdown Voltage IE = 10 µAdc Collector-Emitter Breakdown Voltage IC = 0.1 Adc Collector-Emitter Cutoff Current VEB = 0.5 Vdc, VCE = 60 Vdc VEB = 0.5 Vdc, VCE = 110 Vdc VEB = 0.5 Vdc, VCE = 160 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 10 10 10 µAdc 120101 Page 1 of 2 2N4150, 2N4150S, 2N5237, 2N5237S, 2N5238, 2N5238S JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics OFF CHARACTERISTICS (con’t) Collector-Base Cutoff Current VCE = 60 Vdc VCE = 110 Vdc VCE = 160 Vdc Emitter-Base Cutoff Current VBE = 7.0 Vdc VBE = 5.0 Vdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 150 Vdc VCB = 200 Vdc VCB = 80 Vdc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 5.0 Vdc Symbol 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S All Types 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S All Types All Types IC = 5.0 Adc, VCE = 5.0 Vdc IC = 10 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 5.0 Adc, IB = 0.5 Adc IC = 10 Adc, IB = 1.0 Adc Base-Emitter Saturation Voltage IC = 5.0 Adc, IB = 0.5 Adc IC = 10 Adc, IB = 1.0 Adc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.2 Adc, VCE = 10 Vdc, f = 10 MHz Forward Current Transfer Ratio IC = 50 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz SWITCHING CHARACTERISTICS Delay Time VCC = 20 Vdc, VBB = 5.0 Vdc, Rise Time IC = 5.0 Adc, IB1 = 0.5 Adc Storage Time VCC = 20 Vdc, VBB = 5.0 Vdc, Fall Time IC = 5.0 Adc, IB1 = -IB2 = 0.5 Adc SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 40 Vdc, IC = 0.22 Adc Test 2 VCE = 70 Vdc, IC = 90 mAdc Test 3 VCE = 120 Vdc, IC = 15 mAdc 2N5237, 2N5237S VCE = 170 Vdc, IC = 3.5 mAdc 2N5238, 2N5238S (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Max. Unit ICEO 10 10 10 µAdc IEBO 10 0.1 µAdc ICBO 10 10 10 0.1 hFE Min. 50 50 50 40 10 µAdc 200 225 225 120 - VCE(sat) 0.6 2.5 Vdc VBE(sat) 1.5 25 Vdc hfe 1.5 7.5 hfe 40 40 40 160 160 250 Cobo t d r t s t f t 350 pF 50 500 1.5 500 µs µs µs µs 120101 Page 2 of 2 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.