isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDW56/58/60 DESCRIPTION ·Collector–Emitter Sustaining Voltage: VCEO(SUS)= -45V- BDW56 = -60V- BDW58 = -80V- BDW60 ·Complement to Type BDW55/57/59 APPLICATIONS ·Designed for use in professional equipment such as telecommunication and etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCER VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage RBE= 1kΩ Collector-Emitter Voltage VALUE BDW56 -45 BDW58 -60 BDW60 -100 BDW56 -45 BDW58 -60 BDW60 -100 BDW56 -45 BDW58 -60 BDW60 -80 UNIT V V V Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak -1.5 A PC Collector Power Dissipation @ TC=25℃ 8 W TJ Junction Temperature 175 ℃ -65~175 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 10 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 100 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDW56/58/60 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDW56 VCEO(SUS) Collector-Emitter Sustaining Voltage BDW58 MIN TYP. MAX UNIT -45 IC= -10mA ;IB=0 B BDW60 V -60 -80 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -0.5 V VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -2V -1.0 V ICBO Collector Cutoff Current VCB= VCBOmax;IE= 0 -0.1 μA BDW56 VCB= -30V; IE=0;TJ= 150℃ -10 BDW58 VCB= -45V; IE=0;TJ= 150℃ -10 BDW60 VCB= -70V; IE=0;TJ= 150℃ -10 -10 ICBO Collector Cutoff Current B IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE-1 DC Current Gain IC= -5mA ; VCE= -2V 25 hFE-2 DC Current Gain IC= -150mA ; VCE= -2V 40 hFE-3 DC Current Gain IC= -500mA ; VCE= -2V 25 Current-Gain—Bandwidth Product IC= -50mA;VCE= -5V;ftest= 35MHz fT μA μA 250 75 MHz 30 ns 40 ns 500 ns 80 ns Switching times td Delay Time tr Rise Time tstg tf Storage Time IC= 0.15A; IB1= -IB2= 15mA; VCC= 10.2V Fall Time isc Website：www.iscsemi.cn 2