ISC BDW84B

Inchange Semiconductor
Product Specification
BDW84/84A/84B/84C/84D
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3PN package
・Complement to type BDW83/83A/83B/83C/83D
・DARLINGTON
・High DC current gain
APPLICATIONS
・For use in power linear and switching
applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
导体
半
电
Absolute maximum ratings(Tc=25℃)
SYMBOL
固
VCBO
PARAMETER
VEBO
M
E
S
E
BDW84B
ANG
Collector-emitter voltage
Emitter-base voltage
Open emitter
-60
-80
BDW84C
-100
BDW84D
-120
BDW84
-45
BDW84A
-60
BDW84B
UNIT
-45
BDW84A
Collector-base voltage
TOR
VALUE
C
U
D
ICON
BDW84
INCH
VCEO
CONDITIONS
Open base
-80
BDW84C
-100
BDW84D
-120
Open collector
V
V
-5
V
IC
Collector current
-15
A
IB
Base current
-0.5
A
PC
Collector power dissipation
TC=25℃
150
Ta=25℃
3.5
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
Inchange Semiconductor
Product Specification
BDW84/84A/84B/84C/84D
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
PARAMETER
Collector-emitter
breakdown voltage
CONDITIONS
MIN
BDW84
-45
BDW84A
-60
BDW84B
IC=-30mA, IB=0
TYP.
MAX
UNIT
V
-80
BDW84C
-100
BDW84D
-120
VCEsat-1
Collector-emitter saturation voltage
IC=-6A ,IB=-12mA
-2.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=-15A ,IB=-150mA
-4.0
V
Base-emitter on voltage
IC=-6A ; VCE=-3V
-2.5
V
VCB=-45V, IE=0
TC=150℃
VCB=-60V, IE=0
TC=150℃
VCB=-80V, IE=0
TC=150℃
VCB=-100V, IE=0
TC=150℃
VCB=-120V, IE=0
TC=150℃
-0.5
-5.0
-0.5
-5.0
-0.5
-5.0
-0.5
-5.0
-0.5
-5.0
mA
-1
mA
-2
mA
VBE
BDW84
BDW84A
ICBO
体
半导
Collector
cut-off current
固电
ICEO
BDW84B
BDW84C
BDW84D
IN
Collector
cut-off current
D
N
O
IC
M
E
S
GE
BDW84
VCE=-30V, IB=0
BDW84A
VCE=-30V, IB=0
BDW84B
VCE=-40V, IB=0
BDW84C
VCE=-50V, IB=0
BDW84D
VCE=-60V, IB=0
N
A
H
C
R
O
T
UC
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-6A ; VCE=-3V
750
hFE-2
DC current gain
IC=-15A ; VCE=-3V
100
VEC
Diode forward voltage
IE=-15A
ton
Turn-on time
toff
Turn-off time
IC =-10 A, IB1 =-IB2=-40 mA
RL=3Ω; VBE(off) =4.2V
Duty Cycle≤2%
20000
-3.5
V
0.9
μs
7.0
μs
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
2
MAX
UNIT
0.83
℃/W
Inchange Semiconductor
Product Specification
BDW84/84A/84B/84C/84D
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions(unindicated tolerance:±0.1mm)
3