isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDX92/94/96 DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -60V(Min)- BDX92 -80V(Min)- BDX94 -100V(Min)- BDX96 ·Complement to Type BDX91/93/95 APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX92 VCBO VCEO VEBO Collector-Base Voltage n c . i m e -60 s c s i . w BDX94 -80 BDX96 -100 w w Collector-Emitter Voltage UNIT BDX92 -60 BDX94 -80 BDX96 -100 V V Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 200 ℃ -65~200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.94 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDX92/94/96 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BDX92 V(BR)CEO Collector-Emitter Breakdown Voltage TYP. MAX UNIT BDX94 -45 -60 IC= -30mA ;IB=0 B V -80 BDX96 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -0.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -1A -1.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -5A; IB= -1A -2.0 V -1.4 V VBE(on) B B B B m e s c s i . Base-Emitter On Voltage IC= -3A; VCE= -2V BDX92 ICBO ICEO ww Collector Cutoff Current w Collector Cutoff Current BDX94 BDX96 BDX92 n c . i VCB= -60V; IE= 0 VCB= -30V; IE= 0; TC= 150℃ -0.1 -2.0 VCB= -80V; IE= 0 VCB= -40V; IE= 0; TC= 150℃ -0.1 -2.0 VCB= -100V; IE= 0 VCB= -50V; IE= 0; TC= 150℃ -0.1 -2.0 VCE= -60V;IB= 0 BDX94 VCE= -80V;IB= 0 BDX96 VCE= -100V;IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -3A; VCE= -2V 20 hFE-2 DC Current Gain IC= -5A; VCE= -2V 10 Current-Gain—Bandwidth Product IC= -1A; VCE= -10V 4 fT mA -0.2 mA -0.1 mA MHz Switching times ton Turn-on Time toff Turn-off Time 1.0 μs 2.0 μs IC= -3A; IB1= -IB2= -0.3A isc Website：www.iscsemi.cn 2