Inchange Semiconductor Product Specification BDY55 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current capability ・Fast switching speed APPLICATIONS ・LF large signal power amplification. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 Absolute maximum ratings(Ta=25℃) SYMBOL VALUE TOR UNIT 100 V 60 V 7 V Collector current 15 A Base current 7 A 117 W 固 PARAMETER CONDITIONS VCBO Collector-base voltage VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector IC IB Open emitter EMIC S E G AN INCH C U D ON PT Total power dissipation TC=25℃ Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 1.5 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BDY55 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=0.4A 1.1 V VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=3.3A 2.5 V VBE Base-emitter on voltage IC=4 A; VCE=4V 1.8 V ICEX Collector cut-off current VCE=100V; VBE=-1.5V TC=150℃ 5.0 30 mA ICEO Collector cut-off current VCE=30V; IB=0 0.7 mA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE-1 hFE-2 fT CONDITIONS 导体 半 电 固 DC current gain N A H INC Transition frequency MAX 20 IC=10A ; VCE=4V 10 IC=1A ; VCE=4V;f=10MHz 10 UNIT V R O T UC D N O IC IC=4A ; VCE=4V 2 TYP. 60 M E S GE DC current gain MIN 70 MHz Inchange Semiconductor Product Specification BDY55 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3