isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU108 DESCRIPTION ·High Voltage ·High Switching Speed ·Collector Current- IC = 5A APPLICATIONS ·Designed for high voltage CRT scanning applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous 3.5 A IE Emitter Current-Continuous 8.5 A PC Collector Power Dissipation @VCE≤100V,TC≤95℃ 12.5 W TJ Junction Temperature 115 ℃ Tstg Storage Temperature -65~115 ℃ MAX UNIT 1.6 ℃/W B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU108 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX V(BR)EBO Emitter-Base Breakdown Voltage IE= 100mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.3 V ICEX Collector Cutoff Current VCE= 1500V; VBE= -2V 1.0 mA ICBO Collector Cutoff Current VCB= 1500V; IE= 0 1.0 mA hFE DC Current Gain IC= 1A ; VCE= 5V Fall Time IC= 4.5A 1.2 μs tf isc Website：www.iscsemi.cn 2 5 UNIT V 8