isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2507AF DESCRIPTION ·High Switching Speed ·High Voltage APPLICATIONS ·Designed for use in horizontal deflection circuits of coluor TV receivers and computer monitors. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCESM Collector-Emitter Voltage VBE=0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current-Continuous 8 A ICM Collector Current-peak 15 A IB Base Current-Continuous 4 A IBM Base Current-peak 6 A PC Collector Power Dissipation @TC=25℃ 45 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.8 K/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2507AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A ;IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A ;IB= 0.8A 1.1 V ICES Collector Cutoff Current VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0;TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 100mA; VCE= 5V hFE-2 DC Current Gain IC= 4A ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1MHz 17 5 7 9 68 pF Switching times tstg Storage Time 6.0 μs 0.5 μs IC= 4A, IB(end)= 0.7A; LB= 6μH; -VBB= 4V B tf Fall Time isc Website：www.iscsemi.cn