ISC BU2727DX

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU2727DX
DESCRIPTION
·High Switching Speed
·High Voltage
·Built-in Ddamper Ddiode
APPLICATIONS
·Designed for use in horizontal deflection circuits of high
resolution monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0)
1700
V
VCEO
Collector-Emitter Voltage
825
V
VEBO
Emitter-Base Voltage
7.5
V
IC
Collector Current- Continuous
12
A
ICM
Collector Current-Peak
30
A
IB
Base Current- Continuous
12
A
IBM
Base Current-Peak
20
A
PC
Collector Power Dissipation
@ TC=25℃
45
W
TJ
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.8
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU2727DX
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 600mA; IC= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.91A
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 0.91A
1.0
V
ICES
Collector Cutoff Current
VCE= 1700V; VBE= 0
VCE= 1700V; VBE= 0; TC=125℃
1.0
2.0
mA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 5A; VCE= 1V
isc Website:www.iscsemi.cn
7.5
UNIT
V
B
B
2
22
5.5
11