isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in high frequency and efficency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current 2 A PC Collector Power Dissipation @ TC=25℃ 75 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.66 ℃/W BU810 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BU810 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 20mA 2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A 2.5 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A 3 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2A; IB= 20mA 2.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 0.2A 3 V ICES Collector Cutoff Current VCE= 600V; VBE= 0 0.2 mA ICEO Collector Cutoff Current VCE= 400V; IB= 0 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 150 mA VECF C-E Diode Forward Voltage IF= 7A 3 V 0.6 μs 1.5 μs 0.5 μs B B B B B MIN TYP. MAX 400 UNIT V Switching Times, Resistive Load ton Turn-On Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 2A; IB1= 20mA;VBE(off)= -5V VClamp= 250V 2