isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU908 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 700V (Min) ·High Power Dissipation: PD= 125W@TC= 25℃ APPLICATIONS ·Designed for use in color TV horizontal deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 8 A PC Collector Power Dissipation @ TC=25℃ 125 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU908 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.2A; IB= 0.8A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3.2A; IB= 0.8A 1.3 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃ 0.1 2.0 mA IEBO Emitter Cutoff Current VEB= 5.0V; IC= 0 0.1 mA hFE DC Current Gain IC= 1.5A; VCE= 5V Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V fT isc Website：www.iscsemi.cn 2 8 7 MHz