isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU931RP DESCRIPTION ·High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT 450 V 400 V 5 V 15 A 30 A s c s i . w w w IC Collector Current ICM Collector Current-peak IB Base Current 1 A IBM Base Current-peak 5 A PC Collector Power Dissipation @TC=25℃ 125 W Tj Junction Temperature 150 ℃ -40~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU931RP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 10mH VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA 1.6 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.8 V V CE(sat)-3 Collector-Emitter Saturation Voltage IC= 10 A; IB= 250mA 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 8 A; IB= 100mA 2.2 V V BE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 250mA 2.2 V VCE= 450V;VBE= 0 VCE= 450V;VBE= 0;Tj= 125℃ 1.0 5.0 mA VCE= 400V;IB= 0 1.0 mA VEB= 5V; IC= 0 50 mA 2.8 V ICES Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain VECF C-E Diode Forward Voltage CONDITIONS B n c . i m e s c is isc Website：www.iscsemi.cn IC= 5A; VCE= 10V IF= 10A TYP. MAX 400 B . w w w MIN UNIT V 300