isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU941 DESCRIPTION ·High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current 1 A IBM Base Current-Peak 5 A PC Collector Power Dissipation @TC=25℃ 180 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.97 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU941 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0;L= 10mH VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.6 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10 A; IB= 250mA 1.8 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 12 A; IB= 300mA 2.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 8 A; IB= 100mA 2.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10 A; IB= 250mA 2.5 V VBE(sat)-3 Base-Emitter Saturation Voltage IC= 12 A; IB= 300mA 2.7 V ICES Collector Cutoff Current VCE= 500V;VBE= 0 VCE= 500V;VBE= 0;Tj= 125℃ 0.1 0.5 mA ICEO Collector Cutoff Current VCE= 450V; IB= 0 VCE= 450V; IB= 0;Tj= 125℃ 0.1 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 20 mA hFE DC Current Gain IC= 5A ; VCE= 10V VECF C-E Diode Forward Voltage IF= 10A 2.5 V isc Website：www.iscsemi.cn CONDITIONS MIN TYP MAX 400 B B B B UNIT V 300 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Website：www.iscsemi.cn isc Product Specification BU941