isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUH313D DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Integrated Diode APPLICATIONS ·Horizontal deflection stage in standard and high resolution Displays for TV’s and monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current 3 A IBM Base Current-Peak 5 A PC Collector Power Dissipation @TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUH313D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.75A 1.3 V IEBO Emitter Cutoff Current VEB= 5V; IC=0 300 mA ICES Collector Cutoff Current VCE= 1300V;VBE= 0 VCE= 1300V;VBE= 0;TC=125℃ 1.0 2.0 mA hFE DC Current Gain IC= 3A ; VCE= 5V IC= 3A ; VCE= 5V;TC=100℃ VECF C-E Diode Forward Voltage IF= 3A 2.5 V 1.8 2.7 μs 0.2 0.3 μs 600 UNIT V B B 5 3 Switching Times; Resistive Load ts Storage Time IC= 3A;IB1= 1A; IB2= 1.5A VCC= 400V tf Fall Time isc Website：www.iscsemi.cn