isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUJ403A DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Desined for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current 3 A IBM Base Current-Peak 5 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUJ403A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0, L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.5 V ICES Collector Cutoff Current VCE=RatedVCES ;VBE= 0 VCE=RatedVCES ;VBE= 0;TC=125℃ 1 2 mA ICEO Collector Cutoff Current VCE= 550V; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 1mA ; VCE= 5V 13 hFE-2 DC Current Gain IC= 0.5A ; VCE= 5V 20 47 hFE-3 DC Current Gain IC= 2A ; VCE= 5V 13 25 hFE-4 DC Current Gain IC= 3A ; VCE= 5V 550 UNIT V B B 15.5 Switching Times ;Resistive Load ton Turn-on Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 2.5A; IB1= -IB2= 0.5A; RL= 75Ω; VBB2= 4V 0.5 μs 3.0 μs 0.3 μs