isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUS48P DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are particulary suited for line-operated swtchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits Absolute maximum ratings(Ta=25℃) SYMBOL VALUE UNIT 850 V 400 V 7 V ww VCEV Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 5 A IBM Base Current-peak 20 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 175 ℃ -65~175 ℃ B Tstg Storage Temperature Range n c . i m e s c s .i PARAMETER THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUS48P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A IC= 10A; IB= 2A;TC= 100℃ 1.5 2.0 V VCE (sat)-2 Collector-Emitter Saturation Voltage IC= 15A ;IB= 3A 5.0 V Base-Emitter Saturation Voltage IC= 10A; IB= 2A IC= 10A; IB= 2A;TC= 100℃ 1.6 1.6 V ICER Collector Cutoff Current VCE=rated VCER; RBE= 10Ω VCE=rated VCER; RBE= 10Ω;TC=125℃ 0.5 3.0 mA ICEV Collector Cutoff Current VCE=rated VCES; VBE(off)= 1.5V VCE=rated VCES; VBE(off)= 1.5V;TC=125℃ 0.2 2.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE DC Current Gain COB Output Capacitance 350 pF 0.2 μs 0.7 μs VBE(sat) CONDITIONS w. w w Switching times Resistive Load m e s isc IC= 10A; VCE= 5V n c . i IE= 0; VCB= 10V, ftest= 1MHz MIN MAX UNIT 400 V 7 V 8 td Delay Time tr Rise Time ts Storage Time 2.0 μs tf Fall Time 0.4 μs IC= 10A; IB1= 2A; VCC= 250V; VBE(off)= 5V, Duty Cycle≤2% isc Website：www.iscsemi.cn