isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV24 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 0.6V (Max.)@IC= 6A ·High Power Dissipation ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min.) APPLICATIONS ·Designed for use in power switching applications in military and industrial equipments. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCER Collector-Emitter Voltage RBE= 100Ω 440 V VCEX Collector-Emitter Voltage VBE= -1.5V 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 4 A PC Collector Power Dissipation @TC=25℃ 250 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV24 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A 0.6 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A ;IB= 2.4A 1.0 V Base-Emitter Saturation Voltage IC= 12A ;IB= 2.4A 1.15 V ICEO Collector Cutoff Current VCE= 320V; IB= 0 3.0 mA ICEX Collector Cutoff Current VCE= VCEX;VBE= -1.5V VCE= VCEX;VBE= -1.5V;TC=125℃ 3.0 12 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 6A ; VCE= 4V 15 hFE-2 DC Current Gain IC= 12A ; VCE= 4V 8 Current-Gain—Bandwidth Product IC= 2A;VCE= 15V, ftest= 10MHz 8 VBE(sat) fT CONDITIONS MIN TYP. MAX UNIT 400 V 7 V B 60 MHz Switching Times ton Turn-on Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 12A ;IB1=-IB2= 2.4A 1.6 μs 3.0 μs 1.4 μs