isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUV27F/AF DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 120V(Min)- BUV27F 150V(Min)- BUV27AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO PARAMETER Collector-Emitter Voltage VBE= 0 VALUE BUV27F 240 BUV27AF 300 BUV27F 120 BUV27AF 150 UNIT V Collector-Emitter Voltage V Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation @ TC=25℃ 18 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 7.0 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 55 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUV27F/AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS BUV27F VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage TYP. MAX V B BUV27F UNIT 120 IC= 0.2A ;IB= 0; L= 25mH 150 BUV27AF VCE(sat) MIN IC= 8A; IB= 0.8A 1.5 B V BUV27AF IC= 7A; IB= 0.7A 1.0 BUV27F IC= 8A; IB= 0.8A 2.0 BUV27AF IC= 7A; IB= 0.7A 2.0 B B V B ICEX Collector Cutoff Current VCE=VCESmax;VBE=-1.5V,TJ=125℃ 1.0 mA ICES Collector Cutoff Current VCE=VCESmax;VBE=0,TJ=125℃ 3.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 mA 0.4 0.8 μs 0.5 1.2 μs 0.12 0.4 μs Switching Times; Resistive Load ton Turn-On Time tstg Storage Time tf Fall Time isc Website：www.iscsemi.cn For BUV27F IC= 8A; IB1= 0.8A; IB2= -1.6A For BUV27AF IC= 7A; IB1= 0.7A; IB2= -1.4A 2