Inchange Semiconductor Product Specification BUV47A Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage ・Fast switching time APPLICATIONS ・Suited for 220V switchmode power supply,DC and AC motor control PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 导体 半 电 固 Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER R O T UC OND CONDITIONS VALUE UNIT 1000 V 450 V 7 V Collector current 9 A ICM Collector current-peak 15 A IB Base current 3 A IBM Base current -peak 6 A PC Collector power dissipation 120 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.0 ℃/W EMIC VCBO Collector-base voltage Open emitter VCEO Collector-emitter voltage Open base Emitter-base voltage Open collector VEBO IC S E G N A H C IN TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BUV47A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;L=25mH V(BR)EBO Emitter-base breakdown voltage IE=50mA ;IC=0 VCEsat-1 Collector-emitter saturation voltage VCEsat-2 MIN TYP. MAX 450 UNIT V 30 V IC=5A; IB=1.0A 1.5 V Collector-emitter saturation voltage IC=8A; IB=2.5A 3.0 V Base-emitter saturation voltage IC=5A; IB=1.0A 1.6 V ICES Collector cut-off current VCE=1000V; VBE=0 TC=125℃ 0.15 1.5 mA ICER Collector cut-off current VCB=1000V;RBE=10Ω TC=125℃ 0.4 3.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE DC current gain VBEsat fT COB 体 半导 固电 7 IC=1A ; VCE=5V Transition frquency IC=0.5A ; VCE=10V;f=1MHz Output capacitance IC=0 ; VCB=20V;f=0.1MHz ton Turn-on time ts Storage time tf Fall time IC=5A; IB1=-IB2=1A VCC=150V 2 50 R O T UC D N O IC M E S GE N A H INC Switching times resistive load 15 8 MHz 105 pF 1.0 μs 3.0 μs 0.8 μs Inchange Semiconductor Product Specification BUV47A Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions 3