ISC BUW11A

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUW11 BUW11A
DESCRIPTION
・With TO-3PN package
・High voltage ;high speed
APPLICATIONS
・Converters
・Inverters
・Switching regulators
・Motor control systems
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
导体
半
电
Absolute maximum ratings(Ta=25℃)
SYMBOL
固
PARAMETER
VCBO
CONDITIONS
Open emitter
BUW11A
M
E
S
E
BUW11
VCEO
C
U
D
ICON
BUW11
Collector-base voltage
G
N
A
CH
Collector-emitter voltage
Open base
BUW11A
VEBO
IN
Open collector
UNIT
850
V
1000
400
V
450
9
V
Collector current
5
A
ICM
Collector current-peak
10
A
IB
Base current
2
A
IBM
Base current-peak
4
A
PT
Total power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
1.25
K/W
IC
Emitter-base voltage
TOR
VALUE
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
Thermal resistance from junction to mounting base
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUW11 BUW11A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BUW11
VCEO(SUS)
Collector-emitter
sustaining voltage
V
1.4
V
VCE=Rated VCES; VBE=0
Tj=125℃
1.0
2.0
mA
VEB=9V; IC=0
10
mA
BUW11
IC=3A; IB=0.6A
BUW11A
IC=2.5A; IB=0.5A
导体
半
电
固
DC current gain
N
A
H
INC
IC=0.5A ; VCE=5V
R
O
T
UC
D
N
O
IC
IC=5mA ; VCE=5V
M
E
S
GE
DC current gain
Switching times resistive load
ts
1.5
Base-emitter
saturation voltage
Emitter cut-off current
ton
IC=3A; IB=0.6A
IC=2.5A; IB=0.5A
IEBO
hFE-2
450
BUW11A
Collector cut-off current
Turn-on time
10
35
10
35
1.0
μs
4.0
μs
0.8
μs
For BUW11F
IC=3A ;IB1=-IB2=-0.6A
Storage time
For BUW11AF
IC=2.5A ;IB1=-IB2=-0.5A
tf
UNIT
V
Collector-emitter
saturation voltage
ICES
hFE-1
MAX
IC=0.1A ; IB=0; L=25mH
BUW11
VBEsat
TYP.
400
BUW11A
VCEsat
MIN
Fall time
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUW11 BUW11A
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3