ISC BUW12A

Inchange Semiconductor
Product Specification
BUW12 BUW12A
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High voltage,fast speed
・Low collector saturation voltage
APPLICATIONS
・Specially intended for operating
In industrial applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
导体
半
电
Absolute maximum ratings(Ta=25℃)
SYMBOL
固
PARAMETER
VCBO
CONDITIONS
C
U
D
ICON
BUW12
Collector-base voltage
Open emitter
BUW12A
M
E
S
E
BUW12
VCEO
G
N
A
CH
Collector-emitter voltage
IN
Open collector
V
1000
400
V
450
9
V
Collector current
8
A
ICM
Collector current-peak
20
A
IB
Base current
4
A
PT
Total power dissipation
125
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~175
℃
MAX
UNIT
1.2
℃/W
IC
Emitter-base voltage
UNIT
850
Open base
BUW12A
VEBO
TOR
VALUE
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
BUW12 BUW12A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
Collector-emitter
sustaining voltage
CONDITIONS
BUW12
MIN
TYP.
MAX
UNIT
400
IC=0.1A ; IB=0; L=25mH
BUW12A
V
450
VCEsat
Collector-emitter saturation voltage
IC=6A; IB=1.2A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.2A
1.5
V
1.0
mA
10
mA
ICES
Collector
cut-off current
BUW12
BUW12A
VCE=850V; VBE=0
VCE=1000V; VBE=0
IEBO
Emitter cut-off current
VEB=9V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
导体
半
电
15
R
O
T
UC
Switching times resistive load
ton
固
D
N
O
IC
Turn-on time
ts
Storage time
tf
Fall time
M
E
S
GE
IC=6A ;IB1=-IB2=1.2A
VCC=240V
N
A
H
INC
2
50
1.0
μs
4.0
μs
0.8
μs
Inchange Semiconductor
Product Specification
BUW12 BUW12A
Silicon NPN Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions
3