isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUW132/A DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V (Min)-BUW132 500V (Min)-BUW132A APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage MAX BUW132 850 BUW132A 1000 BUW132 450 BUW132A 500 UNIT V V Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current 6 A IBM Base Current-Peak 12 A PC Collector Power Dissipation @TC=25℃ 125 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUW132/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS BUW132 VCE(sat)-2 VBE(sat) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage TYP. MAX BUW132 UNIT 450 IC= 0.1A ; IB= 0; L= 10mH V 500 BUW132A VCE(sat)-1 MIN IC= 3A; IB= 0.4A 2.5 B V BUW132A IC= 3A; IB= 0.6A 1.0 BUW132 IC= 5A; IB= 0.66A 3.0 BUW132A IC= 5A; IB= 1A 1.5 BUW132 IC= 5A; IB= 0.66A 1.5 BUW132A IC= 5A; IB= 1A 1.5 0.25 1.5 mA 1 mA 350 pF B B V B B V B ICEV Collector Cutoff Current VCE=VCESMmax;VBE=-1.5V VCE=VCESMmax;VBE=-1.5V;TJ=100℃ IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 8A ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1kHz 5 Switching Times , Resistive Load ton Turn-On Time tstg Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 5A ;IB1= 0.66A;IB2= -1.3A 0.35 μs 1.5 μs 0.1 μs