Inchange Semiconductor Product Specification BUW34 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・For high voltage ,fast switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) 体 半导 SYMBOL PARAMETER VALUE UNIT 500 V 400 V 7 V 10 A Collector current-peak 15 A IB Base current 5 A PT Total power dissipation 125 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.4 ℃/W 固电 CONDITIONS VCBO Collector-base voltage Open emitter VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage IC ICM N A H INC M E S GE Collector current D N O IC Open collector TC≤25℃ R O T UC THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BUW34 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.5 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A 1.5 V ICES Collector cut-off current VCE=500V ;VBE=0 TC=125℃ 0.1 3.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE-1 DC current gain IC=1A ; VCE=5V 15 hFE-2 DC current gain IC=5A ; VCE=5V 8 导体 半 电 固 MIN Turn-on time Storage time tf Fall time IC=5A ;IB1=- IB2=1A VCC=250V 2 UNIT V 50 R O T UC D N O IC M E S GE N A H INC ts MAX 400 Switching times ton TYP. 0.7 μs 3.0 μs 0.8 μs Inchange Semiconductor Product Specification BUW34 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3