isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX40A DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 125V(Min) ·High Current Capability ·Good Linearity of hFE APPLICATIONS ·Designed for switching and linear applications in military equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT Collector-Base Voltage 160 V Collector-Emitter Voltage 125 V Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 28 A IB Base Current-Continuous 4 A PC Collector Power Dissipation @TC=100℃ 120 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ VCBO VCEO(SUS) VEBO B PARAMETER THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX40A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.88A 1.6 V Base-Emitter Saturation Voltage IC= 15A; IB= 1.88A 2.0 V ICEO Collector Cutoff Current VCE= 100V;IB= 0 3.0 mA ICEX Collector Cutoff Current VCE= 160V;VBE= -1.5V VCE= 160V;VBE= -1.5V; TC= 125℃ 3.0 12 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 mA hFE-1 DC Current Gain IC= 10A ; VCE= 4V 15 hFE-2 DC Current Gain IC= 15A ; VCE= 4V 8 Current-Gain—Bandwidth Product IC= 1A ; VCE= 15V; ftest= 10MHz 50 VBE(sat) fT isc Website：www.iscsemi.cn CONDITIONS 2 MIN TYP. MAX 125 UNIT V 45 MHz