isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX66/A DESCRIPTION ·Contunuous Collector Current-IC= -2A ·Power Dissipation-PD= 35W @TC= 25℃ ·Collector-Emitter Saturation Voltage: VCE(sat)= -2.5V(Max)@ IC = -1A APPLICATIONS ·Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER VALUE BUX66 -200 BUX66A -300 BUX66 -150 BUX66A -250 Collector-Base Voltage UNIT V Collector-Emitter Voltage V Emitter-Base Voltage -6 V IC Collector Current-Continuous -2.0 A ICP Collector Current-Peak -5.0 A IB Base Current -1.0 A PC Collector Power Dissipation@TC=25℃ 35 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX66/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUX66 VCEO(SUS) Collector-Emitter Sustaining Voltage MIN TYP. MAX UNIT -150 IC= -200mA ; IB=0 BUX66A V -250 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.15A -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.15A -1.4 V VCB= -150V; IE= 0 -1.0 BUX66 ICBO B B Collector Cutoff Current mA BUX66A VCB= -250V; IE= 0 -1.0 -0.5 IEBO Emitter Cutoff Current VEB= -6V; IC=0 hFE DC Current Gain IC= -1A ; VCE= -5V Current Gain-Bandwidth Product IC= -0.5A ; VCE= -10V fT isc Website：www.iscsemi.cn 2 10 mA 150 30 MHz