isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUY89 DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) APPLICATIONS ·Designed for use in AC motor control systems from threephase mains. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage (VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A ICSM Collector Current-Peak Non-repetitive 15 A IB Base Current 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation @TC=25℃ 80 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.12 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUY89 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IB= 0; L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.5 V ICES Collector Cutoff Current VCE=VCESMmax;VBE= 0 VCE=VCESMmax;VBE= 0;TJ= 100℃ 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 mA hFE DC Current Gain IC= 4.5A ; VCE= 5V Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 5V; ftest= 5MHz Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz fT COB CONDITIONS MIN TYP. MAX 800 UNIT V 2.5 7 MHz 125 pF 1.5 μs 4.5 μs 0.5 μs Switching Times , Resistive Load ton Turn-On Time tstg Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 4.5A ;IB1= -IB2= 2A; VCC= 250V; RL= 56Ω