isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors D44TD3/4/5 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 300V(Min)- D44TD3 = 350V(Min)- D44TD4 = 400V(Min)- D44TD5 ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for switching regulators, high resolution deflection circuits, inverters and motor drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEV VCEO VEBO PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage VALUE D44TD3 400 D44TD4 500 D44TD5 600 D44TD3 300 D44TD4 350 D44TD5 400 UNIT V V Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.56 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors D44TD3/4/5 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS D44TD3 VCEO(SUS) Collector-Emitter Sustaining Voltage D44TD4 MIN MAX UNIT 300 IC= 0.1A ;IB= 0 B D44TD5 V 350 400 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.5 V D44TD3 VCE= 400V;VBE(off)= 1.5V 0.1 D44TD4 VCE= 500V;VBE(off)= 1.5V 0.1 D44TD5 VCE= 600V;VBE(off)= 1.5V 0.1 1.0 ICEV Collector Cutoff Current B B IEBO Emitter Cutoff Current VEB= 6V; IC=0 hFE DC Current Gain IC= 2A ; VCE= 3V isc Website：www.iscsemi.cn 2 5 mA mA