isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors D45VH Series DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·Complement to Type D44VH Series APPLICATIONS ·Designed for high-speed switching applications, such as switching regulators and high frequency inverters. They are also well-suited for drivers for high power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEV VCEO VEBO PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage VALUE D45VH 1 -50 D45VH 4 -70 D45VH 7 -80 D45VH 10 -100 D45VH 1 -30 D45VH 4 -45 D45VH 7 -60 D45VH 10 -80 UNIT V V Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -20 A PC Collector Power Dissipation @TC=25℃ 83 W Tj Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors D45VH Series ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS D45VH 1 VCEO(SUS) Collector-Emitter Sustaining Voltage MIN TYP. MAX UNIT -30 D45VH 4 -45 IC= -25mA ;IB= 0 V B D45VH 7 -60 D45VH 10 -80 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A ;IB= -0.8A -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -15A ;IB= -3A;TC=100℃ -1.5 V Base-Emitter Saturation Voltage IC= -8A ;IB= -0.8A IC= -8A ;IB= -0.8A;TC=100℃ -1.0 -1.5 V ICEV Collector Cutoff Current VCE=RatedVCE;VBE(off)=-4V VCE=RatedVCE;VBE(off)=-4V;TC=100℃ -10 -100 μA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -10 μA hFE-1 DC Current Gain IC= -2A ; VCE= -1V 35 hFE-2 DC Current Gain IC= -4A ; VCE= -1V 20 COB Output Capacitance IE= 0;VCB= -10V,ftest= 1.0MHz 275 pF Current-Gain—Bandwidth Product IC= 0.1A;VCE= -10V;ftest= 20MHz 50 MHz VBE(sat) fT Switching Times td Delay Time tr Rise Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= -8A; IB1= -IB2= -0.8A VCC= -20V 50 ns 250 ns 700 ns 90 ns