INCHANGE MOSFET IRF634 N-channel mosfet transistor Features 123 ・With TO-220 package ・Simple drive requirements ・Fast switching ・VDSS=250V; RDS(ON)≤0.45Ω;ID=8.1A ・1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 250 V VGS Gate-source voltage ±20 V Drain Current-continuous@ TC=25℃ 8.1 A Total Dissipation@TC=25℃ 74 W Max. Operating Junction temperature 150 ℃ -65~150 ℃ ID R O 体 T U TO-220 导 D 半 N O C 固电 I EM S E Electrical Characteristics Tc=25℃ G N A INCH Ptot Tj Tstg SYMBOL Storage temperature PARAMETER CONDITIONS V(BR)DSS Drain-source breakdown voltage VGS=0; ID=0.25mA VGS(TH) Gate threshold voltage VDS= VGS; ID=0.25mA RDS(ON) Drain-source on-stage resistance IGSS MIN MAX 250 2 UNIT V 4 V VGS=10V; ID=5.1A 450 mΩ Gate source leakage current VGS=±20V;VDS=0 ±100 nA IDSS Zero gate voltage drain current VDS=250V; VGS=0 25 uA VSD Diode forward voltage IF=8.1A; VGS=0 2.0 V