isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·High DC current gain ·Collector-Emitter Sustaining VoltageVCEO(SUS)= -80V(Min) ·Complement to type PMD16K80 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications n c . i m e ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE s c s .i ww w IC Collector Current -Continuous ICP UNIT -80 -80 -5.0 V V V -20 A Collector Current-Peak -40 A IB Base Current -0.5 A PC Collector Power Dissipation@TC=25℃ 200 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER ThermalResistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 0.875 ℃/W PMD17K80 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor PMD17K80 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100Ma; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -40mA -2.8 V VBE(on) Base-Emitter On Voltage IC= -10A; VCE= -3V -2.8 V ICER Collector Cutoff current VCE= -80V; RBE= 1KΩ VCE= -80V; RBE= 1KΩ, TC=150℃ -1.0 -5.0 mA IEBO Emitter Cut-off current VEB= -5V; IC= 0 -2.0 mA hFE DC Current Gain fT COB CONDITIONS B IC= -10A; VCE= -3V Current-Gain—Bandwidth Product IC= -7A; VCE= -3V, f= 1kHz Output Capacitance IE= 0; VCB= -10V; ftest= 1.0MHz isc Website：www.iscsemi.cn 2 MAX -80 n c . i m e s c s i . w w w MIN 800 UNIT V 20000 4 MHz 400 pF