isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·High DC current gain ·Collector-Emitter Breakdown VoltageV(BR)CEO= -60V(Min) ·Complement to type PMD1601K APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications n c . i m e ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE s c s .i w w w IC Collector Current -Continuous ICP UNIT -60 -60 -5.0 V V V -20 A Collector Current-Peak -40 A IB Base Current -0.5 A PC Collector Power Dissipation@TC=25℃ 180 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER ThermalResistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 0.97 ℃/W PMD1701K isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor PMD1701K ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA; IB= 0 -60 V V(BR)CER Collector-Emitter Breakdown Voltage IC= -100mA; RBE= 2.2kΩ -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -40mA -2.8 V VBE(on) Base-Emitter On Voltage IC= -10A; VCE= -3V -2.8 V ICER Collector Cutoff current VCE= -60V; RBE= 2.2KΩ -7.0 mA IEBO Emitter Cut-off current -3.0 mA hFE DC Current Gain fT COB CONDITIONS n c . i m e s c s i . w w w VEB= -5V; IC= 0 IC= -10A; VCE= -3V Current-Gain—Bandwidth Product IC= -7A; VCE= -3V, f= 1kHz Output Capacitance IE= 0; VCB= -10V; ftest= 1.0MHz isc Website：www.iscsemi.cn MIN 2 750 MAX UNIT 20000 4 MHz 400 pF