Inchange Semiconductor Product Specification TIP120/121/122 Silicon NPN Darlington Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type TIP125/126/127 APPLICATIONS ・Designed for general–purpose amplifier and low–speed switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 体 导 半 Absolute maximum ratings(Tc=25℃) 固电 SYMBOL VCBO VCEO PARAMETER EM S E G N A H Collector-base voltage INC Collector-emitter voltage TIP120 TIP121 D N O IC CONDITIONS Open emitter Emitter-base voltage IC VALUE 80 100 TIP120 60 TIP121 Open base UNIT 60 TIP122 TIP122 VEBO R O T UC 80 V V 100 Open collector 5 V Collector current-DC 5 A ICM Collector current-Pulse 8 A IB Base current-DC 120 mA PC Collector power dissipation TC=25℃ 65 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification TIP120/121/122 Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP120 VCEO(SUS) Collector-emitter sustaining voltage TIP121 MIN TYP. MAX UNIT 60 IC=0.1A, IB=0 V 80 TIP122 100 VCEsat-1 Collector-emitter saturation voltage IC=3A ,IB=12mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=5A ,IB=20mA 4.0 V Base-emitter on voltage IC=3.0A ; VCE=3V 2.5 V 0.2 mA VBE ICBO ICEO Collector cut-off current TIP120 VCB=60V, IE=0 TIP121 VCB=80V, IE=0 TIP122 VCB=100V, IE=0 体 导 半 固电 TIP120 EM S E NG Collector cut-off current R O T UC D N O IC VCE=30V, IB=0 TIP121 VCE=40V, IB=0 TIP122 VCE=50V, IB=0 hFE-1 A H C IN DC current gain IC=0.5A ; VCE=3V 1000 hFE-2 DC current gain IC=3.0A ; VCE=3V 1000 Cob Output capacitance IE=0 ; VCB=10V,f=0.1MHz IEBO Emitter cut-off current VEB=5V; IC=0 2 0.5 mA 2 mA 200 pF Inchange Semiconductor Product Specification TIP120/121/122 Silicon NPN Darlington Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC Inchange Semiconductor Product Specification TIP120/121/122 Silicon NPN Darlington Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC