ISC TIP125

Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
TIP125/126/127
DESCRIPTION
・With TO-220C package
・DARLNGTON
・High DC durrent gain
・Low collector saturation voltage
・Complement to type TIP120/121/122
APPLICATIONS
・Designed for general–purpose amplifier
and low–speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
体
导
半
Absolute maximum ratings(Tc=25℃)
固电
SYMBOL
VCBO
VCEO
PARAMETER
EM
S
E
G
N
A
H
Collector-base voltage
INC
Collector-emitter voltage
TIP125
TIP126
D
N
O
IC
CONDITIONS
Open emitter
Emitter-base voltage
IC
VALUE
-80
-100
TIP125
-60
TIP126
Open base
UNIT
-60
TIP127
TIP127
VEBO
R
O
T
UC
-80
V
V
-100
Open collector
-5
V
Collector current-DC
-5
A
ICM
Collector current-Pulse
-8
A
IB
Base current-DC
-120
mA
PC
Collector power dissipation
TC=25℃
65
Ta=25℃
2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
TIP125/126/127
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TIP125
VCEO(SUS)
Collector-emitter
sustaining voltage
TIP126
MIN
TYP.
MAX
UNIT
-60
IC=-0.1A, IB=0
V
-80
TIP127
-100
VCEsat-1
Collector-emitter saturation voltage
IC=-3A ,IB=-12mA
-2.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=-5A ,IB=-20mA
-4.0
V
Base-emitter on voltage
IC=-3.0A ; VCE=-3V
-2.5
V
-0.2
mA
VBE
ICBO
ICEO
IEBO
hFE-1
Collector
cut-off current
TIP125
VCB=-60V, IE=0
TIP126
VCB=-80V, IE=0
TIP127
VCB=-100V, IE=0
体
导
半
固电
Collector
cut-off current
IN
VCE=-30V, IB=0
TIP126
VCE=-40V, IB=0
TIP127
VCE=-50V, IB=0
EM
S
E
NG
CHA
Emitter cut-off current
TIP125
R
O
T
UC
D
N
O
IC
VEB=-5V; IC=0
DC current gain
IC=-0.5A ; VCE=-3V
1000
hFE-2
DC current gain
IC=-3.0A ; VCE=-3V
1000
Cob
Output capacitance
IE=0 ; VCB=-10V,f=0.1MHz
2
-0.5
mA
-2
mA
300
pF
Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
TIP125/126/127
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
D
N
O
IC
Fig.2 Outline dimensions
3
R
O
T
UC
Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
体
导
半
固电
EM
S
E
NG
A
H
C
IN
4
TIP125/126/127
D
N
O
IC
R
O
T
UC