Inchange Semiconductor Product Specification TIP150/151/152 Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON APPLICATIONS ・For use in automotive ignition,switching and motor control applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 体 半导 Absolute maximum ratings(Tc=25℃) SYMBOL 固电 VCBO VCEO PARAMETER Collector-base voltage Collector-emitter voltage VEBO Emitter-base voltage IC D N O IC TIP150 TIP151 Open emitter M E S GE N A H INC R O T UC CONDITIONS TIP152 TIP150 TIP151 Open base TIP152 VALUE UNIT 300 350 V 400 300 350 V 400 Open collector 8 V Collector current-DC 7 A ICM Collector current-Pulse 10 A IB Base current-DC 1.5 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 1.56 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification TIP150/151/152 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP150 V(BR)CEO V(BR)CBO Collector-emitter breakdown voltage Collector-base breakdown voltage MIN TYP. MAX UNIT 300 IC=10mA, IB=0 TIP151 TIP152 400 TIP150 300 IC=1mA, IE=0 TIP151 V 350 V 350 TIP152 400 VCEsat-1 Collector-emitter saturation voltage IC=1A ,IB=10mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=2A ,IB=100mA 1.5 V VCEsat-3 Collector-emitter saturation voltage IC=5A ,IB=250mA 2.0 V VBE sat-1 Base-emitter saturation voltage IC=2A ,IB=100mA 2.2 V 2.3 V 250 μA 15 mA 导体 半 电 固 VBE sat-2 Base-emitter saturation voltage TIP150 VCE=300V, IB=0 TOR C U D ON IC=5A ,IB=250mA IC M E ES ICEO Collector cut-off current TIP151 VCE=350V, IB=0 VCE=400V, IB=0 IEBO Emitter cut-off current VEB=8V; IC=0 hFE-1 INCH TIP152 DC current gain IC=2.5A ; VCE=5V 150 hFE-2 DC current gain IC=5A ; VCE=5V 50 hFE-3 DC current gain IC=7A ; VCE=5V 15 Diode forward voltage IF=7A 3.5 V Output capacitance IE=0 ; VCB=10V;f=1MHz 150 pF VF COB ANG Switching times td Delay time tr Rise time ts Storage time tf Fall time VCC=250V; IC=5A IB1=-IB2=250mA tp=20μs;Duty Cycle≤2.0% 2 0.03 μs 0.18 μs 3.5 μs 1.6 μs Inchange Semiconductor Product Specification TIP150/151/152 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC M E S GE N A H INC R O T UC Fig.2 Outline dimensions 3