isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors TIP31E DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage: V(BR) CEO= 140V(Min) ·Complement to Type TIP32E APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. 5 n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 180 140 V V V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 5 A IB Base Current 1 A PC Collector Power Dissipation TC=25℃ 40 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 3.125 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors TIP31E ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A 2.5 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V 1.8 V ICES Collector Cutoff Current VCE= 180V; VEB= 0 0.2 mA ICEO Collector Cutoff Current VCE= 90V; IB= 0 0.3 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain hFE-2 DC Current Gain fT CONDITIONS MIN 140 B B n c . i m e s c s i . w w w Current-Gain—Bandwidth Product isc Website：www.iscsemi.cn MAX IC= 1A ; VCE= 4V 25 IC= 3A ; VCE= 4V 5 IC= 0.5A ; VCE= 10V 3 UNIT V MHz