isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors TIP50 DESCRIPTION ·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min) APPLICATIONS ·Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.0 A ICM Collector Current-Peak 2.0 A Base Current 0.6 A Collector Power Dissipation TC=25℃ 40 Collector Power Dissipation Ta=25℃ 2 IB B PD Tj Tstg Junction Temperature Storage Temperature Range W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.125 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors TIP50 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.0 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 10V 1.5 V ICES Collector Cutoff Current VCE= 500V; VBE= 0 1.0 mA ICEO Collector Cutoff Current VCE= 300V; IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.3A; VCE= 10V 30 hFE-2 DC Current Gain IC= 1A; VCE= 10V 10 Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 10 fT isc Website：www.iscsemi.cn 400 UNIT B V 150 MHz