isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors TIP562/563 DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 300V(Min)- TIP562 = 400V(Min)- TIP563 ·High Power Dissipation APPLICATIONS ·Designed for converters, inverters, pulse-width-modulated regulators, and a variety of power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO(SUS) VEBO PARAMETER VALUE TIP562 300 TIP563 400 TIP562 300 TIP563 400 Collector-Base Voltage UNIT V Collector-Emitter Voltage V Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 2 A PC Collector Power Dissipation @TC=100℃ 100 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors TIP562/563 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS TIP562 MIN TYP. MAX UNIT 300 IC=100mA ; IB=0 V 400 TIP563 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1.66A 1.2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 5A 2.0 V Base-Emitter Saturation Voltage IC= 10A; IB= 1.66A 1.4 V TIP562 VCE= 270V;IB= 0 1.0 TIP563 VCE= 360V;IB= 0 1.0 TIP562 VCB= 300V;IE= 0 0.1 TIP563 VCB= 400V;IE= 0 0.1 5.0 VBE(sat) ICEO ICBO Collector Cutoff Current Collector Cutoff Current mA mA IEBO Emitter Cutoff Current VEB= 8V; IC=0 hFE-1 DC Current Gain IC= 1A ; VCE= 4V 20 hFE-2 DC Current Gain IC= 10A ; VCE= 4V 8 mA Switching Times 0.05 μs 0.5 μs Storage Time 1.2 μs Fall Time 0.3 μs td Delay Time tr Rise Time tstg tf VCC= 180V;VBE= -5.2V IC= 10A; IB1= -IB2= 2A isc Website：www.iscsemi.cn 2