4N38X, 4N38AX 4N38, 4N38A OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT z APPROVALS UL recognised, File No. E91231 Package Code " GG " 7.0 6.0 'X' SPECIFICATIONAPPROVALS VDE 0884 in 3 available lead form : - STD - G form z 1 2 6 5 3 4 1.2 7.62 6.62 - SMD approved to CECC 00802 Certified to EN60950 by :Nemko - Certificate No. P01102464 z Dimensions in mm 2.54 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 DESCRIPTION The 4N38, 4N38A series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES z Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z High BVCEO (80V min) z High Isolation Voltage (5.3kVRMS ,7.5kVPK ) z All electrical parameters 100% tested z Custom electrical selections available APPLICATIONS z DC motor controllers z Industrial systems controllers z Measuring instruments z Signal transmission between systems of different potentials and impedances OPTION SM OPTION G SURFACE MOUNT 7.62 3.35 0.26 ABSOLUTEMAXIMUMRATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUTDIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Collector Current Power Dissipation 80V 80V 6V 50mA 160mW POWER DISSIPATION 0.6 0.1 10.46 9.86 1.25 0.75 0.26 Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) 10.16 ISOCOM COMPONENTS 2004 LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1UD Tel: (01429) 863609 Fax :(01429) 863581 17/7/08 DB90047 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.2 Reverse Current (IR) Output Coupled TEST CONDITION 1.5 V IF = 10mA 10 μA VR = 6V Collector-emitter Breakdown (BVCEO) ( note 2 ) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Collector-base Dark Current (ICBO) 80 V IC = 1mA 80 6 V V nA nA IC = 100μA IE = 100μA VCE = 60V VCE = 60V Current Transfer Ratio (CTR) 20 % 10mA IF , 10V VCE V 20mA IF , 4mA IC VRMS VPK See note 1 See note 1 Ω VIO = 500V (note 1) μs μs VCC = 5V , IF= 10mA, RL = 75Ω 50 20 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO 1.0 5300 7500 Input-output Isolation Resistance RISO 5x1010 Response Time (rise) Response Time (fall) 2 2 (FIG 1) Note 1 Note 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. VCC Input ton toff RL = 75Ω tr Output tf Output 10% 10% 90% 90% FIG 1 17/7/08 DB90047m-AAS/A3 Collector Power Dissipation vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current Relative current transfer ratio Collector power dissipation PC (mW) 200 150 100 50 2.8 2.4 2.0 1.6 1.2 0.8 VCE = 1V TA = 25°C 0.4 0 0 -30 0 25 50 75 100 1 125 2 5 10 20 50 Forward current IF (mA) Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current 80 Relative current transfer ratio Forward current IF (mA) 70 60 50 40 30 20 10 1.4 1.2 1.0 0.8 0.6 0.4 VCE = 10V TA = 25°C 0.2 0 1.5 0 25 50 75 100 125 5 10 20 Forward current IF (mA) Relative Current Transfer Ratio vs. Ambient Temperature Collector-emitter Saturation Voltage vs. Ambient Temperature 1.0 0.5 0 17/7/08 2 Ambient temperature TA ( °C ) IF = 10mA VCE = 10V -30 1 0 25 50 75 Ambient temperature TA ( °C ) 100 Collector-emitter saturation voltage VCE(SAT) (V) Relative current transfer ratio -30 50 0.28 0.24 IF = 20mA IC = 4mA 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 100 Ambient temperature TA ( °C ) DB90047m-AAS/A3