ISOCOM TLP621-2

TLP621, TLP621-2, TLP621-4
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
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UL recognised, File No. E91231
TLP621
DESCRIPTION
The TLP621, TLP621-2 , TLP621-4 series of
optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
Dimensions in mm
2.54
1
2
7.0
6.0
4
3
1.2
5.08
4.08
7.62
4.0
3.0
FEATURES
Options :0.5
10mm lead spread - add G after part no.
3.0
Surface mount - add SM after part no.
3.35
Tape&reel - add SMT&R after part no.
0.5
TLP621-2
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High Current Transfer Ratio ( 50% min)
2.54
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High Isolation Voltage (5.3kVRMS ,7.5kVPK )
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High BVCEO ( 55Vmin )
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All electrical parameters 100% tested
7.0
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Custom electrical selections available
6.0
APPLICATIONS
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Computer terminals
1.2
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Industrial systems controllers
10.16
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Measuring instruments
9.16
4.0
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Signal transmission between systems of
3.0
different potentials and impedances
13°
Max
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0.26
1
8
2
3
7
6
5
4
7.62
13°
Max
0.5
3.0
0.26
3.35
0.5
1
TLP621-4
3
4
2.54
7.0
6.0
OPTION SM
OPTION G
SURFACE MOUNT
7.62
1.2
20.32
19.32
0.6
0.1
10.46
9.86
1.25
0.75
13
5
12
6
11
7
8
10
9
7.62
4.0
3.0
13°
Max
0.5
0.26
10.16
16
15
14
2
3.0
0.5 3.35
0.26
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92547m-AAS/A1
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
5V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Power Dissipation
55V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
Input
Output
Coupled
PARAMETER
MIN TYP MAX UNITS
Forward Voltage (VF)
Reverse Voltage (VR)
Reverse Current (IR)
1.0
5
Collector-emitter Breakdown (BVCEO)
55
( Note 2 )
Emitter-collector Breakdown (BVECO)
6
Collector-emitter Dark Current (ICEO)
Current Transfer Ratio (CTR) (Note 2)
TLP621, TLP621-2, TLP621-4
CTR selection available
GB
BL
GB
7/12/00
1.3
10
100
50
100
200
30
Collector-emitter Saturation VoltageVCE (SAT)
GB
Input to Output Isolation Voltage VISO 5300
7500
Input-output Isolation Resistance RISO 5x1010
Rise Time
tr
Fall Time
tf
Turn-on Time
ton
Turn-off Time
toff
Note 1
Note 2
1.15
600
600
600
0.4
0.4
2
3
3
3
TEST CONDITION
V
V
µA
IF = 10mA
IR = 10µA
VR = 5V
V
IC = 0.5mA
V
nA
IE = 100µA
VCE = 24V
%
%
%
%
5mA IF , 5V VCE
V
V
VRMS
VPK
Ω
µs
µs
µs
µs
8mA IF , 2.4mA IC
1mA IF , 0.2mA IC
See note 1
See note 1
VIO = 500V (note 1)
VCC =10V ,
IC = 2mA, RL = 100Ω
1mA IF , 0.4V VCE
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
DB92547m-AAS/A1
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Low
Collector-emitter Voltage
TA = 25°C
25
Collector current I C (mA)
Collector power dissipation P C (mW)
200
150
100
50
0
15
50
40
30
20
10
10
5
20
5
IF = 2mA
0
-30
0
25
50
75
100
0
125
Ambient temperature TA ( °C )
0.2
50
50
Collector current I C (mA)
Forward current I F (mA)
1.0
TA = 25°C
30
50
40
30
20
10
0
20
40
15
30
10
20
10
IF = 5mA
0
-30
0
25
50
75
100
125
0
Ambient temperature TA ( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
(V)
2
4
6
8
10
Collector-emitter voltage VCE ( V )
Current Transfer Ratio vs. Forward Current
320
0.28
280
0.24
Current transfer ratio CTR (%)
CE(SAT)
0.8
Collector Current vs. Collector-emitter Voltage
60
Collector-emitter saturation voltage V
0.6
Collector-emitter voltage VCE ( V )
Forward Current vs. Ambient Temperature
IF = 5mA
IC = 1mA
0.20
0.16
0.12
0.08
0.04
240
200
160
120
80
VCE = 5V
TA = 25°C
40
0
0
-30
0
25
50
75
Ambient temperature TA ( °C )
7/12/00
0.4
100
1
2
5
10
20
50
Forward current IF (mA)
DB92547m-AAS/A1