ISSI IS45S16100E

IS42S16100E
IS45S16100E
512K Words x 16 Bits x 2 Banks
16Mb SYNCHRONOUS DYNAMIC RAM
FEATURES
• Clock frequency: 200, 166, 143 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Two banks can be operated simultaneously and
independently
• Dual internal bank controlled by A11 (bank select)
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• 2048 refresh cycles every 32ms (Com, Ind, A1
grade) or 16ms (A2 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and
precharge command
• Byte controlled by LDQM and UDQM
• Packages: 400-mil 50-pin TSOP-II and 60-ball
TF-BGA
• Temperature Grades:
Commercial (0oC to +70oC)
Industrial (-40oC to +85oC)
Automotive A1 (-40oC to +85oC)
Automotive A2 (-40oC to +105oC)
SEPTEMBER 2009
DESCRIPTION
ISSI’s 16Mb Synchronous DRAM IS42/4516100E is
organized as a 524,288-word x 16-bit x 2-bank for
improved performance. The synchronous DRAMs
achieve high-speed data transfer using pipeline
architecture. All inputs and outputs signals refer to the
rising edge of the clock input.
PIN CONFIGURATIONS
50-Pin TSOP (Type II)
VDD
1
50
GND
DQ0
2
49
DQ15
DQ1
3
48
DQ14
GNDQ
4
47
GNDQ
DQ2
5
46
DQ13
DQ3
6
45
DQ12
VDDQ
7
44
VDDQ
DQ4
8
43
DQ11
DQ5
9
42
DQ10
GNDQ
10
41
GNDQ
DQ6
11
40
DQ9
DQ7
12
39
DQ8
VDDQ
13
38
VDDQ
LDQM
14
37
NC
WE
15
36
UDQM
CAS
16
35
CLK
RAS
17
34
CKE
CS
18
33
NC
A11
19
32
A9
A10
20
31
A8
A0
21
30
A7
A1
22
29
A6
A2
23
28
A5
A3
24
27
A4
VDD
25
26
GND
PIN DESCRIPTIONS
A0-A10 Row Address Input
CAS Column Address Strobe Command
A11 Bank Select Address
WE
Write Enable
A0-A7
Column Address Input
LDQM
Lower Bye, Input/Output Mask
DQ0 to DQ15
Data DQ
UDQM Upper Bye, Input/Output Mask
CLK
System Clock Input
VDD
Power
CKE
Clock Enable
GND
Ground
Chip Select
VDDQ
Power Supply for DQ Pin
Row Address Strobe Command
GNDQ Ground for DQ Pin
CS
RAS
NC
No Connection
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
1
IS42S16100E, IS45S16100E
PIN CONFIGURATION
package code: B 60 bALL Tf-bga (Top View) (10.1 mm x 6.4 mm Body, 0.65 mm Ball Pitch)
1 2 3 4 5 6 7
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
GND DQ15
DQ0
VDD
DQ14 GND
VDDQ DQ1
DQ13 VDDQ
GNDQ DQ2
DQ12 DQ11
DQ4
DQ3
DQ10 GNDQ
VDDQ DQ5
DQ9 VDDQ
GNDQ DQ6
DQ8
NC
NC
DQ7
NC
NC
VDD
NC
LDQM
WE
NC UDQM
NC
CLK
RAS
CAS
CKE
NC
NC
CS
A11
A9
NC
NC
A8
A7
A0
A10
A6
A5
A2
A1
GND
A4
A3
VDD
PIN DESCRIPTIONS
A0-A10
Row Address Input
A0-A7Column Address Input
A11
Bank Select Address
DQ0 to DQ15Data I/O
CLK
System Clock Input
CKEClock Enable
CSChip Select
RAS
Row Address Strobe Command
CAS
Column Address Strobe Command
2
WE
Write Enable
LDQM, UDQM x16 Input/Output Mask
VddPower
GNDGround
VddqPower Supply for I/O Pin
GNDqGround for I/O Pin
NC
No Connection
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
PIN FUNCTIONS
TSOP Pin No. Symbol
Type
20 to 24
A0-A10
Input Pin
27 to 32
Function (In Detail)
A0 to A10 are address inputs. A0-A10 are used as row address inputs during active
command input and A0-A7 as column address inputs during read or write command input.
A10 is also used to determine the precharge mode during other commands. If A10 is
LOW during precharge command, the bank selected by A11 is precharged, but if A10 is
HIGH, both banks will be precharged.
When A10 is HIGH in read or write command cycle, the precharge starts automatically
after the burst access.
These signals become part of the OP CODE during mode register set command input.
19
A11
Input Pin
A11 is the bank selection signal. When A11 is LOW, bank 0 is selected and when high,
bank 1 is selected. This signal becomes part of the OP CODE during mode register set
command input.
16
CAS
Input Pin
CAS, in conjunction with the RAS and WE, forms the device command. See the
“Command Truth Table” item for details on device commands.
34
CKE
Input Pin
The CKE input determines whether the CLK input is enabled within the device. When is
CKE HIGH, the next rising edge of the CLK signal will be valid, and when LOW, invalid.
When CKE is LOW, the device will be in either the power-down mode, the clock suspend
mode, or the self refresh mode. The CKE is an asynchronous input.
35
CLK
Input Pin
CLK is the master clock input for this device. Except for CKE, all inputs to this device are
acquired in synchronization with the rising edge of this pin.
18
CS
Input Pin
The CS input determines whether command input is enabled within the device. Command input is enabled when CS is LOW, and disabled with CS is HIGH. The device
remains in the previous state when CS is HIGH.
2, 3, 5, 6, 8, 9, 11 DQ0 to
12, 39, 40, 42, 43, DQ15
45, 46, 48, 49
DQ Pin
DQ0 to DQ15 are DQ pins. DQ through these pins can be controlled in byte units
using the LDQM and UDQM pins.
14, 36
LDQM,
UDQM
Input Pin
LDQM and UDQM control the lower and upper bytes of the DQ buffers. In read
mode, LDQM and UDQM control the output buffer. When LDQM or UDQM is LOW, the
corresponding buffer byte is enabled, and when HIGH, disabled. The outputs go to
the HIGH impedance state when LDQM/UDQM is HIGH. This function corresponds to OE
in conventional DRAMs. In write mode, LDQM and UDQM control the input buffer. When
LDQM or UDQM is LOW, the corresponding buffer byte is enabled, and data can be
written to the device. When LDQM or UDQM is HIGH, input data is masked and cannot be
written to the device.
17
RAS
Input Pin
RAS, in conjunction with CAS and WE, forms the device command. See the “Command
Truth Table” item for details on device commands.
15
WE
Input Pin
WE, in conjunction with RAS and CAS, forms the device command. See the “Command
Truth Table” item for details on device commands.
7, 13, 38, 44
VDDQ
Power Supply Pin
VDDQ is the output buffer power supply.
1, 25
VDD
Power Supply Pin
VDD is the device internal power supply.
4, 10, 41, 47
GNDQ
Power Supply Pin
GNDQ is the output buffer ground.
26, 50
GND
Power Supply Pin
GND is the device internal ground.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
3
IS42S16100E, IS45S16100E
CLK
CKE
CS
RAS
CAS
WE
A11
COMMAND
DECODER
&
CLOCK
GENERATOR
MODE
REGISTER
11
ROW
ADDRESS
BUFFER
ROWDECODER
FUNCTIONAL BLOCK DIAGRAM
11
2048
BANK 0
DQM
11
MULTIPLEXER
ROW
ADDRESS
LATCH
11
ROW
ADDRESS
BUFFER
COLUMN
ADDRESSBUFFER
CONTROLLER
11
ROWDECODER
REFRESH
BURSTCOUNTER
8
REFRESH
COUNTER
11
4
SELF
COLUMN
ADDRESSLATCH
REFRESH
CONTROLLER
DATAIN
BUFFER
SENSEAMPI/OGATE
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
MEMORYCELL
ARRAY
256
16
16
DQ0-15
COLUMNDECODER
8
256
SENSEAMPI/OGATE
16
2048
MEMORYCELL
ARRAY
BANK 1
DATAOUT
BUFFER
16
VDD/VDDQ
GND/GNDQ
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Vdd max
Maximum Supply Voltage
–1.0 to +4.6 V
Vddq
Maximum Supply Voltage for Output Buffer
–1.0 to +4.6 V
Vin
Input Voltage
–1.0 to +4.6 V
Vout
Output Voltage
–1.0 to +4.6 V
Pd max
Allowable Power Dissipation
1
W
50
mA
Commerical
Industrial
A1
A2
0 to +70
-40 to +85
-40 to +85
-40 to +105
°C
°C
°C
°C
max
IcsOutput Shorted Current
Topr
Tstg
Operating Temperature
Storage Temperature
Rating
Unit
–55 to +150 °C
DC RECOMMENDED OPERATING CONDITION(2)
(At Ta = 0oC to +70oC for Commercial temperature, Ta = -40oC to +85oC for Industrial and A1 temperature, Ta = -40oC to
+105oC for A2 temperature)
Symbol
Vdd, Vddq
Vih
Vil
Parameter
Supply Voltage
Input High Voltage(3)
Input Low Voltage(4)
Min.
3.0
2.0
-0.3
Typ.
3.3
—
—
Max.
3.6
Vdd + 0.3
+0.8
Unit
V
V
V
CAPACITANCE CHARACTERISTICS(1,2) (At Ta = 0 to +25°C, VDD = VDDQ = 3.3 ± 0.3V, f = 1 MHz)
Symbol
Cin1
Cin2
CI/O
Parameter
Input Capacitance: A0-A11
Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM)
Data Input/Output Capacitance: DQ0-DQ15
Typ.
—
—
—
Max.
4
4
5
Unit
pF
pF
pF
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. All voltages are referenced to GND.
3. Vih (max) = Vddq + 1.2V with a pulse width ≤ 3 ns.
4. Vil (min) = Vddq - 1.2V with a pulse width ≤ 3 ns.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
5
IS42S16100E, IS45S16100E
DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
Speed Min.
Iil
Input Leakage Current
0V ≤ Vin ≤ VDD, with pins other than
–5
the tested pin at 0V
Iol
Output Leakage Current Output is disabled, 0V ≤ Vout ≤ VDD
–5
Voh
Output High Voltage Level Iout = –2 mA
2.4
Vol
Output Low Voltage Level Iout = +2 mA
—
Icc1
Operating Current(1,2)
One Bank Operation, CAS latency = 3 Com.
-5
—
Burst Length=1
Com.
-6
—
trc ≥ trc (min.)
Com.
-7
—
Iout = 0mA
Ind, A1
-6
—
A2
-6
—
Ind, A1 -7
—
A2
-7
—
Icc2p
Precharge Standby CurrentCKE ≤ Vil (max)
tck = tck (min)
Com
—
—
Ind, A1
—
—
Icc2ps (In Power-Down Mode)
tck = ∞
Com
—
—
Ind, A1
—
—
A2
—
—
Icc3n
Active Standby Current
CKE ≥ Vih (min)
tck = tck (min)
—
—
Icc3ns (In Non Power-Down Mode)
tck = ∞
Com
—
—
Ind, A1
—
—
A2
—
—
Icc4
Operating Current
tck = tck (min)
CAS latency = 3 Com
-5
—
(In Burst Mode)(1)
Iout = 0mA
Com
-6
—
Ind, A1
-6
—
A2
-6
—
Com
-7
—
Ind, A1 -7
—
A2
-7
—
CAS latency = 2 Com
-5
—
Com
-6
—
Ind, A1 -6
—
A2
-6
—
Com
-7
—
Ind, A1
-7
—
A2
-7
—
Max.
5
Unit
µA
5
µA
—
V
0.4
V
170
mA
160
140
170
180
160
170
3
mA
4
2
—
—
40
mA
30
30
30
170
mA
150
170
180
130
150
160
170
mA
150
170
180
130
150
160
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time increases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between Vdd and GND for each memory chip
to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc1 and Icc4 depend on the output load. The maximum values for Icc1 and Icc4 are obtained with the output open state.
6
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
Speed Min.
Icc5
Auto-Refresh Current
trc = trc (min)
CAS latency = 3 Com.
-5
—
Com.
-6
—
Ind, A1
-6
—
A2
-6
—
Com
-7
—
Ind, A1
-7
—
A2
-7
—
CAS latency = 2 Com
-5
—
Com
-6
—
Ind, A1 -6
—
A2
-6
—
Com
-7
—
Ind, A1 -7
—
A2
-7
—
Icc6
Self-Refresh Current
CKE ≤ 0.2V
—
—
Max. Unit
120
mA
100
110
120
80
90
100
120
mA
100
110
120
80
90
100
2
mA
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time increases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between Vdd and GND for each memory chip
to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc1 and Icc4 depend on the output load. The maximum values for Icc1 and Icc4 are obtained with the output open state.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
7
IS42S16100E, IS45S16100E
AC CHARACTERISTICS(1,2,3)
-5
Symbol Parameter
Min. Max.
-6 -7 Min. Max.
Min. Max.
tck3
Clock Cycle Time
tck2
CAS Latency = 3
CAS Latency = 2
5 —
8 —
6
8
tac3
Access Time From CLK(4)
tac2
CAS Latency = 3
CAS Latency = 2
— — 5
6
—
—
7
8
Units
—
—
ns
ns
— 5.5
— 6
— 5.5
— 6
ns
ns
tchi
CLK HIGH Level Width
2 —
2.5 —
2.5 —
ns
tcl
CLK LOW Level Width
2 —
2.5 —
2.5 —
ns
toh3
Output Data Hold Time
toh2
CAS Latency = 3
CAS Latency = 2
2 —
2.5 —
2.0 —
2.5 —
2.0 —
2.5 —
ns
ns
0 —
0
— — tlz
Output LOW Impedance Time
thz3
Output HIGH Impedance Time(5)
thz2
CAS Latency = 3
CAS Latency = 2
5
6
—
0
—
ns
— 5.5
— 6
— 5.5
— 6
ns
ns
tds
Input Data Setup Time
2 —
2
—
2
—
ns
tdh
Input Data Hold Time
1 —
1
—
1
—
ns
tas
Address Setup Time
2 —
2
—
2
—
ns
tah
Address Hold Time
1 —
1
—
1
—
ns
tcks
CKE Setup Time
2 —
2
—
2
—
ns
tckh
CKE Hold Time
1 —
1
—
1
—
ns
tcka
CKE to CLK Recovery Delay Time
1CLK+3 —
1CLK+3 —
ns
tcs
Command Setup Time (CS, RAS, CAS, WE, DQM)
2 —
2
—
2
—
ns
tch
Command Hold Time (CS, RAS, CAS, WE, DQM)
1 —
1
—
1
—
ns
trc
Command Period (REF to REF / ACT to ACT)
50 —
54 —
63 —
ns
tras
Command Period (ACT to PRE)
35 100,000
36 100,000
42 100,000
ns
trp
Command Period (PRE to ACT)
15 —
18 —
21 —
ns
trcd
Active Command To Read / Write Command Delay Time
15 —
18 —
21 —
ns
trrd
Command Period (ACT [0] to ACT[1]) 10 —
12 —
14 —
ns
CAS Latency = 3
2CLK —
2CLK —
2CLK —
ns
CAS Latency = 2
2CLK —
2CLK —
2CLK —
ns
Input Data To Active / Refresh
CAS Latency = 3
tdal3
Command Delay time (During Auto-Precharge)
tdal2
CAS Latency = 2
2CLK+trp —
2CLK+trp —
2CLK+trp —
ns
2CLK+trp —
2CLK+trp —
2CLK+trp —
ns
55 —
60 —
70 —
ns
tdpl3
Input Data To Precharge
Command Delay time
tdpl2
1CLK+3 —
txsr
Exit Self-Refresh to Active Time
tt
Transition Time
0.3 1.2
0.3 1.2
0.3 1.2
ns
tref
Refresh Cycle Time (2048) for temperature Ta ≤ 85 C
— 32
— 32
— 32
ms
tref
Refresh Cycle Time (2048) for temperature Ta > 85 C (A2 only) — —
— —
— 16
ms
o
o
6
Notes:
1. When power is first applied, memory operation should be started 100 µs after Vdd and Vddq reach their stipulated voltages. Also note that the power-on
sequence must be executed before starting memory operation.
2. Measured with tt = 1 ns.
3. The reference level is 1.4 V when measuring input signal timing. Rise and fall times are measured between Vih (min.) and Vil (max.).
4. Access time is measured at 1.4V with the load shown in the figure below.
5. The time thz (max.) is defined as the time required for the output voltage to transition by ± 200 mV from Voh (min.) or Vol (max.) when the
output is in the high impedance state.
6. Self-Refresh Mode is not supported for A2 grade with Ta > 85oC.
8
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
OPERATING FREQUENCY / LATENCY RELATIONSHIPS (CAS Latency = 3)
Symbol Parameter
-5
-6
-7
Units
—
Clock Cycle Time
5
6
7
ns
—
Operating Frequency
200
166
143
MHz
tcac
CAS Latency
3
3
3
cycle
trcd
Active Command To Read/Write Command Delay Time
3
3
3
cycle
trac
RAS Latency (trcd + tcac)
6
6
6
cycle
trc
Command Period (REF to REF / ACT to ACT)
10
9
9
cycle
tras
Command Period (ACT to PRE)
7
6
6
cycle
trp
Command Period (PRE to ACT)
3
3
3
cycle
trrd
Command Period (ACT[0] to ACT [1])
2
2
2
cycle
tccd
Column Command Delay Time
(RE AD, READA, WRIT, WRITA)
1
1
1
cycle
tdpl
Input Data To Precharge Command Delay Time
2
2
2
cycle
tdal
Input Data To Active/Refresh Command Delay Time
(During Auto-Precharge)
5
5
5
cycle
trbd
Burst Stop Command To Output in HIGH-Z Delay Time
(Read)
3
3
3
cycle
twbd
Burst Stop Command To Input in Invalid Delay Time
(Write)
0
0
0
cycle
trql
Precharge Command To Output in HIGH-Z Delay Time
(Read)
3
3
3
cycle
twdl
Precharge Command To Input in Invalid Delay Time
(Write)
0
0
0
cycle
tpql
Last Output To Auto-Precharge Start Time (Read)
–2
–2
–2
cycle
tqmd
DQM To Output Delay Time (Read)
2
2
2
cycle
tdmd
DQM To Input Delay Time (Write)
0
0
0
cycle
tmcd
Mode Register Set To Command Delay Time
2
2
2
cycle
AC TEST CONDITIONS (Input/Output Reference Level: 1.4V)
Output Load
Input
tCHI
tCK
tCL
50Ω
2.8V
CLK
1.4V
0.0V
tCS
+1.4V
I/O
tCH
2.8V
INPUT 1.4V
0.0V
tAC
tOH
OUTPUT
1.4V
1.4V
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
50pF
9
IS42S16100E, IS45S16100E
COMMANDS
Active Command
Read Command
CLK
CLK
CKE HIGH
CKE HIGH
CS
CS
RAS
RAS
CAS
CAS
WE
WE
A0-A9
ROW
A0-A9
A10
ROW
A10
COLUMN (1)
AUTOPRECHARGE
NOPRECHARGE
BANK1
A11
BANK1
A11
BANK0
BANK0
Write Command
Precharge Command
CLK
CLK
CKE HIGH
CKE HIGH
CS
CS
RAS
RAS
CAS
CAS
WE
WE
A0-A9
COLUMN(1)
A0-A9
BANK0ANDBANK1
AUTOPRECHARGE
A10
A10
NOPRECHARGE
BANK0ORBANK1
BANK1
BANK1
A11
A11
BANK0
BANK0
Don'tCare
Notes:
1. A8-A9 = Don’t Care.
10
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Rev. D
08/24/09
IS42S16100E, IS45S16100E
COMMANDS (cont.)
No-Operation Command
CLK
CKE
Device Deselect Command
CLK
HIGH
CKE
CS
CS
RAS
RAS
CAS
CAS
WE
WE
A0-A9
A0-A9
A10
A10
A11
A11
Mode Register Set Command
HIGH
Auto-Refresh Command
CLK
CLK
CKE HIGH
CKE HIGH
CS
CS
RAS
RAS
CAS
CAS
WE
WE
A0-A9
OP-CODE
A0-A9
A10
OP-CODE
A10
A11
OP-CODE
A11
Don'tCare
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
11
IS42S16100E, IS45S16100E
COMMANDS (cont.)
Self-Refresh Command
CLK
CLK
CKE
CKE
CS
CS
NOP
RAS
RAS
NOP
CAS
CAS
NOP
WE
WE
NOP
A0-A9
A0-A9
A10
A10
A11
A11
Clock Suspend Command
CLK
CKE
12
Power Down Command
ALLBANKSIDLE
Burst Stop Command
CLK
BANK(S)ACTIVE
CKE
CS
NOP
CS
RAS
NOP
RAS
CAS
NOP
CAS
WE
NOP
WE
A0-A9
A0-A9
A10
A10
A11
A11
HIGH
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Mode Register Set Command
(CS, RAS, CAS, WE = LOW)
The IS42/4516100E product incorporates a register
that defines the device operating mode. This command
functions as a data input pin that loads this register from
the pins A0 to A11. When power is first applied, the
stipulated power-on sequence should be executed and
then the IS42/4516100E should be initialized by executing
a mode register set command.
When the A10 pin is HIGH, this command functions as a
read with auto-precharge command. After the burst read
completes, the bank selected by pin A11 is precharged.
When the A10 pin is LOW, the bank selected by the A11
pin remains in the activated state after the burst read
completes.
Note that the mode register set command can be
executed only when both banks are in the idle state (i.e.
deactivated).
Write Command
Another command cannot be executed after a mode
register set command until after the passage of the period
tmcd, which is the period required for mode register set
command execution.
When burst write mode has been selected with the mode
register set command, this command selects the bank
specified by the A11 pin and starts a burst write operation
at the start address specified by pins A0 to A9. This first
data must be input to the DQ pins in the cycle in which
this command.
Active Command
The selected bank must be activated before executing
this command.
(CS, RAS = LOW, CAS, WE= HIGH)
The IS42/4516100E includes two banks of 2048 rows each.
This command selects one of the two banks according
to the A11 pin and activates the row selected by the pins
A0 to A10.
This command corresponds to the fall of the RAS signal
from HIGH to LOW in conventional DRAMs.
Precharge Command
(CS, CAS, WE = LOW, RAS = HIGH)
When A10 pin is HIGH, this command functions as a
write with auto-precharge command. After the burst write
completes, the bank selected by pin A11 is precharged.
When the A10 pin is low, the bank selected by the A11
pin remains in the activated state after the burst write
completes.
After the input of the last burst write data, the application
must wait for the write recovery period (tdpl, tdal) to elapse
according to CAS latency.
(CS, RAS, WE = LOW, CAS = HIGH)
This command starts precharging the bank selected by
pins A10 and A11. When A10 is HIGH, both banks are
precharged at the same time. When A10 is LOW, the
bank selected by A11 is precharged. After executing this
command, the next command for the selected bank(s)
is executed after passage of the period trp, which is the
period required for bank precharging.
This command corresponds to the RAS signal from LOW
to HIGH in conventional DRAMs
Read Command
(CS, CAS = LOW, RAS, WE = HIGH)
This command selects the bank specified by the A11 pin
and starts a burst read operation at the start address
specified by pins A0 to A9. Data is output following CAS
latency.
Auto-Refresh Command
(CS, RAS, CAS = LOW, WE, CKE = HIGH)
This command executes the auto-refresh operation. The
row address and bank to be refreshed are automatically
generated during this operation.
Both banks must be placed in the idle state before executing
this command.
The stipulated period (trc) is required for a single refresh
operation, and no other commands can be executed during
this period.
The device goes to the idle state after the internal refresh
operation completes.
This command must be executed periodically according
to tref specification (AC Characteristics).
This command corresponds to CBR auto-refresh in
conventional DRAMs.
The selected bank must be activated before executing
this command.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
13
IS42S16100E, IS45S16100E
Self-Refresh Command
Power-Down Command
(CS, RAS, CAS, CKE = LOW, WE = HIGH)
(CKE = LOW)
This command executes the self-refresh operation. The
row address to be refreshed, the bank, and the refresh
interval are generated automatically internally during this
operation.The self-refresh operation is started by dropping
the CKE pin from HIGH to LOW. The self-refresh operation
continues as long as the CKE pin remains LOW and there
is no need for external control of any other pins. The
self-refresh operation is terminated by raising the CKE
pin from LOW to HIGH. The next command cannot be
executed until the device internal recovery period (txsr)
has elapsed. After the self-refresh, since it is impossible
to determine the address of the last row to be refreshed,
an auto-refresh should immediately be performed for all
addresses (4096 cycles).
When both banks are in the idle (inactive) state, or when
at least one of the banks is not in the idle (inactive) state,
this command can be used to suppress device power
dissipation by reducing device internal operations to
the absolute minimum. Power-down mode is started by
dropping the CKE pin from HIGH to LOW. Power-down
mode continues as long as the CKE pin is held low. All pins
other than the CKE pin are invalid and none of the other
commands can be executed in this mode.The power-down
operation is terminated by raising the CKE pin from LOW
to HIGH. The next command cannot be executed until the
recovery period (tcka) has elapsed.
Both banks must be placed in the idle state before executing
this command.
Since this command differs from the self-refresh command
described above in that the refresh operation is not
performed automatically internally, the refresh operation
must be performed within the refresh period (tref). Thus
the maximum time that power-down mode can be held is
just under the refresh cycle time.
Burst Stop Command
(CS, WE, = LOW, RAS, CAS = HIGH)
The command forcibly terminates burst read and write
operations. When this command is executed during a burst
read operation, data output stops after the CAS latency
period has elapsed.
No Operation
(CS, = LOW, RAS, CAS, WE = HIGH)
This command has no effect on the device.
Device Deselect Command
(CS = HIGH)
This command does not select the device for an object of
operation. In other words, it performs no operation with
respect to the device.
14
Clock Suspend
(CKE = LOW)
This command can be used to stop the device internal
clock temporarily during a read or write cycle. Clock
suspend mode is started by dropping the CKE pin from
HIGH to LOW. Clock suspend mode continues as long as
the CKE pin is held LOW. All input pins other than the CKE
pin are invalid and none of the other commands can be
executed in this mode. Also note that the device internal
state is maintained. Clock suspend mode is terminated
by raising the CKE pin from LOW to HIGH, at which point
device operation restarts. The next command cannot be
executed until the recovery period (tcka) has elapsed.
Since this command differs from the self-refresh command
described above in that the refresh operation is not
performed automatically internally, the refresh operation
must be performed within the refresh period (tref). Thus
the maximum time that clock suspend mode can be held
is just under the refresh cycle time.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
COMMAND TRUTH TABLE(1,2)
Symbol Command
MRS
Mode Register Set(3,4)
REF
Auto-Refresh(5)
SREF
Self-Refresh(5,6)
PRE
Precharge Selected Bank
PALL
Precharge Both Banks
ACT
Bank Activate(7)
WRIT
Write
WRITA
Write With Auto-Precharge(8)
READ
Read(8)
READA
Read With Auto-Precharge(8)
BST
Burst Stop(9)
NOP
No Operation
DESL
Device Deselect
SBY
Clock Suspend / Standby Mode
ENB
Data Write / Output Enable
MASK
Data Mask / Output Disable
CKE
n-1 n CS RASCAS WEDQM
H X
L
L
L
L
X
H H L
L
L H X
H L
L
L
L H X
H X
L
L H L
X
H X
L
L H L
X
H X
L
L H H X
H X
L H L
L
X
H X
L H L
L
X
H X
L H L H X
H X
L H L H X
H X
L H H L
X
H X
L H H H X
H X H X X X X
L
X X X X X X
H X X X X X
L
H X X X X X H
A11 A10 A9-A0 I/On
OP CODE X
X
X
X HIGH-Z
X
X
X HIGH-Z
BS
L
X
X
X
H
X
X
BS Row Row
X
BS
L Column(18) X
BS
H Column(18) X
BS
L Column(18) X
BS
H Column(18) X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Active
X
X
X HIGH-Z
DQM TRUTH TABLE(1,2)
Symbol Command
ENB
Data Write / Output Enable
MASK
Data Mask / Output Disable
ENBU
Upper Byte Data Write / Output Enable
ENBL
Lower Byte Data Write / Output Enable
MASKU Upper Byte Data Mask / Output Disable
MASKL Lower Byte Data Mask / Output Disable
CKE
n-1
H
H
H
H
H
H
n
X
X
X
X
X
X
DQM
UPPER LOWER
L
L
H
H
L
X
X
L
H
X
X
H
CKE TRUTH TABLE(1,2)
Symbol Command
SPND Start Clock Suspend Mode
—
Clock Suspend
—
Terminate Clock Suspend Mode
REF
Auto-Refresh
SELF Start Self-Refresh Mode
SELFX Terminate Self-Refresh Mode
PDWN Start Power-Down Mode
—
Terminate Power-Down Mode
Current State
Active
Other States
Clock Suspend
Idle
Idle
Self-Refresh
Idle
Power-Down
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
CKE
n-1 n CS RASCAS WE
H L
X X X X
L
L
X X X X
L H X X X X
H H L
L
L H
H L
L
L
L H
L H L H H H
L H H X X X
H L
L H H H
H L H X X X
L H X X X X
A11 A10A9-A0
X X X
X X X
X X X
X X X
X X X
X X X
X X X
X X X
X X X
X X X
15
IS42S16100E, IS45S16100E
OPERATION COMMAND TABLE(1,2)
Current State
Idle
Row Active
Read
Write
Read With
Auto-
Precharge
16
Command
DESL
NOP
BST
READ / READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
Operation No Operation or Power-Down(12)
No Operation or Power-Down(12)
No Operation or Power-Down
Illegal
Illegal
Row Active
No Operation
Auto-Refresh or Self-Refresh(13)
Mode Register Set
No Operation
No Operation
No Operation
Read Start(17)
Write Start(17)
Illegal(10)
Precharge(15)
Illegal
Illegal
Burst Read Continues, Row Active When Done
Burst Read Continues, Row Active When Done
Burst Interrupted, Row Active After Interrupt
Burst Interrupted, Read Restart After Interrupt(16)
Burst Interrupted Write Start After Interrupt(11,16)
Illegal(10)
Burst Read Interrupted, Precharge After Interrupt
Illegal
Illegal
Burst Write Continues, Write Recovery When Done
Burst Write Continues, Write Recovery When Done
Burst Write Interrupted, Row Active After Interrupt
Burst Write Interrupted, Read Start After Interrupt(11,16)
Burst Write Interrupted, Write Restart After Interrupt(16)
Illegal(10)
Burst Write Interrupted, Precharge After Interrupt
Illegal
Illegal
Burst Read Continues, Precharge When Done
Burst Read Continues, Precharge When Done
Illegal
Illegal
Illegal
Illegal(10)
Illegal(10)
Illegal
Illegal
CS RASCAS WE A11 A10A9-A0
H
X
X
X
X
X
X
L
H
H
H
X
X
X
L
H
H
L
X
X
X
L
H
L
H
V
V V(18)
L
H
L
L
V
V V(18)
L
L
H
H
V
V V(18)
L
L
H
L
V
V
X
L
L
L
H
X
X
X
L
L
L
L
OP CODE
H
X
X
X
X
X
X
L
H
H
H
X
X
X
L
H
H
L
X
X
X
L
H
L
H
V
V V(18)
L
H
L
L
V
V V(18)
L
L
H
H
V
V V(18)
L
L
H
L
V
V
X
L
L
L
H
X
X
X
L
L
L
L
OP CODE
H
X
X
X
X
X
X
L
H
H
H
X
X
X
L
H
H
L
X
X
X
L
H
L
H
V
V V(18)
L
H
L
L
V
V V(18)
L
L
H
H
V
V V(18)
L
L
H
L
V
V
X
L
L
L
H
X
X
X
L
L
L
L
OP CODE
H
X
X
X
X
X
X
L
H
H
H
X
X
X
L
H
H
L
X
X
X
L
H
L
H
V
V V(18)
L
H
L
L
V
V V(18)
L
L
H
H
V
V V(18)
L
L
H
L
V
V
X
L
L
L
H
X
X
X
L
L
L
L
OP CODE
H
X
X
X
X
X
X
L
H
H
H
X
X
X
L
H
H
L
X
X
X
L
H
L
H
V
V V(18)
L
H
L
L
V
V V(18)
L
L
H
H
V
V V(18)
L
L
H
L
V
V
X
L
L
L
H
X
X
X
L
L
L
L
OP CODE
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
OPERATION COMMAND TABLE(1,2)
Current State Command Write With
DESL
Auto-Precharge NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
Row Precharge DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
Immediately DESL
Following
NOP
Row Active
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
Operation
Burst Write Continues, Write Recovery And Precharge
When Done
CS RASCAS WE A11 A10A9-A0
H
X
X
X
X
X
X
X
X
Burst Write Continues, Write Recovery And Precharge
L
H
H
H
X
Illegal
Illegal
Illegal
Illegal(10)
Illegal(10)
Illegal
Illegal
No Operation, Idle State After trp Has Elapsed
No Operation, Idle State After trp Has Elapsed
No Operation, Idle State After trp Has Elapsed
Illegal(10)
Illegal(10)
Illegal(10)
No Operation, Idle State After trp Has Elapsed(10)
Illegal
Illegal
No Operation, Row Active After trcd Has Elapsed
No Operation, Row Active After trcd Has Elapsed
No Operation, Row Active After trcd Has Elapsed
Illegal(10)
Illegal(10)
Illegal(10,14)
Illegal(10)
Illegal
Illegal
L
L
L
L
L
L
L
H
L
H
H
H
L
L
L
L
X
H
H
L
L
H
H
L
L
X
H
L
H
L
H
L
H
L
X
H
X
X
X
(18)
V
V V
V
V V(18)
V
V V(18)
V
V
X
X
X
X
OPCODE
X
X
X
X
X
X
L
H
H
L
X
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
L
H
H
L
L
X
H
H
L
L
H
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
V
V V(18)
V
V V(18)
V
V V(18)
V
V
X
X
X
X
OP CODE
X
X
X
X
X
X
X
X
X
V
V V(18)
V V V(18)
V V V(18)
X
V
X
V
X
X
X
X
Write
Recovery
DESL
NOP
L
No Operation, Row Active After tdpl Has Elapsed H
No Operation, Row Active After tdpl Has Elapsed L
L
X
H
L
X
H
L
X
H
OP CODE
X
X
X
X
X
X
BST
No Operation, Row Active After tdpl Has Elapsed L
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
Read Start
Write Restart
Illegal(10)
Illegal(10)
Illegal
Illegal
H
H
H
L
L
L
L
H
L
L
H
H
L
L
L
H
L
H
L
H
L
X X X
V V V(18)
V V V(18)
V V V(18)
V V X
X X X
OP CODE
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
L
L
L
L
L
L
17
IS42S16100E, IS45S16100E
OPERATION COMMAND TABLE(1,2)
Current State Command
Write Recovery DESL
With Auto-
NOP
Precharge
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
Refresh
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
Mode Register DESL
Set
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
Operation
No Operation, Idle State After tdal Has Elapsed
No Operation, Idle State After tdal Has Elapsed
No Operation, Idle State After tdal Has Elapsed
Illegal(10)
Illegal(10)
Illegal(10)
Illegal(10)
Illegal
Illegal
No Operation, Idle State After trp Has Elapsed
No Operation, Idle State After trp Has Elapsed
No Operation, Idle State After trp Has Elapsed
Illegal
Illegal
Illegal
Illegal
Illegal
Illegal
No Operation, Idle State After tmcd Has Elapsed
No Operation, Idle State After tmcd Has Elapsed
No Operation, Idle State After tmcd Has Elapsed
Illegal
Illegal
Illegal
Illegal
Illegal
Illegal
CS RASCAS WE A11 A10A9-A0
H
X
X
X
X
X
X
L
H
H
H
X
X
X
L
H
H
L
X
X
X
L
H
L
H
V
V V(18)
L
H
L
L
V
V V(18)
L
L
H
H
V
V V(18)
L
L
H
L
V
V
X
L
L
L
H
X
X
X
L
L
L
L
OP CODE
H
X
X
X
X
X
X
L
H
H
H
X
X
X
L
H
H
L
X
X
X
L
H
L
H
V
V V(18)
L
H
L
L
V
V V(18)
L
L
H
H
V
V V(18)
L
L
H
L
V
V
X
L
L
L
H
X
X
X
L
L
L
L
OP CODE
H
X
X
X
X
X
X
L
H
H
H
X
X
X
L
H
H
L
X
X
X
L
H
L
H
V
V V(18)
L
H
L
L
V
V V(18)
L
L
H
H
V
V V(18)
L
L
H
L
V
V
X
L
L
L
H
X
X
X
L
L
L
L
OP CODE
Notes:
1. H: HIGH level input, L: LOW level input, X: HIGH or LOW level input, V: Valid data input
2. All input signals are latched on the rising edge of the CLK signal.
3. Both banks must be placed in the inactive (idle) state in advance.
4. The state of the A0 to A11 pins is loaded into the mode register as an OP code.
5. The row address is generated automatically internally at this time. The DQ pin and the address pin data is ignored.
6. During a self-refresh operation, all pin data (states) other than CKE is ignored.
7. The selected bank must be placed in the inactive (idle) state in advance.
8. The selected bank must be placed in the active state in advance.
9. This command is valid only when the burst length set to full page.
10. This is possible depending on the state of the bank selected by the A11 pin.
11. Time to switch internal busses is required.
12. The IS42/4516100E can be switched to power-down mode by dropping the CKE pin LOW when both banks in the idle state. Input pins other than CKE are ignored at this time.
13. The IS42/4516100E can be switched to self-refresh mode by dropping the CKE pin LOW when both banks in the idle state. Input pins other than CKE are ignored at this time.
14. Possible if trrd is satisfied.
15. Illegal if tras is not satisfied.
16. The conditions for burst interruption must be observed. Also note that the IS42/4516100E will enter the precharged state immediately after the burst operation completes if auto-precharge is selected.
17. Command input becomes possible after the period trcd has elapsed. Also note that the IS42/4516100E will enter the precharged state immediately after the burst operation completes if auto-precharge is selected.
18. A8,A9 = don’t care.
18
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
CKE RELATED COMMAND TRUTH TABLE(1)
CKE
Current State
Operation
n-1 n CS RAS CAS WE A11 A10 A9-A0
Self-Refresh
Undefined
H
X
X
X
X
X
X
X
X
Self-Refresh Recovery(2)
L
H
H
X
X
X
X
X
X
(2)
Self-Refresh Recovery L
H
L
H
H
X
X
X
X
Illegal(2)
L
H
L
H
L
X
X
X
X
(2)
Illegal L
H
L
L
X
X
X
X
X
Self-Refresh
L
L
X
X
X
X
X
X
X
Self-Refresh Recovery Idle State After trc Has Elapsed
H
H
H
X
X
X
X
X
X
Idle State After trc Has Elapsed
H
H
L
H
H
X
X
X
X
Illegal
H
H
L
H
L
X
X
X
X
Illegal
H
H
L
L
X
X
X
X
X
Power-Down on the Next Cycle
H
L
H
X
X
X
X
X
X
Power-Down on the Next Cycle
H
L
L
H
H
X
X
X
X
Illegal
H
L
L
H
L
X
X
X
X
Illegal
H
L
L
L
X
X
X
X
X
(2)
Clock Suspend Termination on the Next Cycle L
H
X
X
X
X
X
X
X
Clock Suspend
L
L
X
X
X
X
X
X
X
Power-Down
Undefined
H
X
X
X
X
X
X
X
X
Power-Down Mode Termination, Idle After L
H
X
X
X
X
X
X
X
That Termination(2)
Power-Down Mode
L
L
X
X
X
X
X
X
X
Both Banks Idle
No Operation
H
H
H
X
X
X
X
X
X
See the Operation Command Table
H
H
L
H
X
X
X
X
X
Bank Active Or Precharge
H
H
L
L
H
X
X
X
X
Auto-Refresh
H
H
L
L
L
H
X
X
X
Mode Register Set
H
H
L
L
L
L
OP CODE
See the Operation Command Table
H
L
H
X
X
X
X
X
X
See the Operation Command Table
H
L
L
H
X
X
X
X
X
See the Operation Command Table
H
L
L
L
H
X
X
X
X
Self-Refresh(3)
H
L
L
L
L
H
X
X
X
See the Operation Command Table
H
L
L
L
L
L
OP CODE
L
X
X
X
X
X
X
X
X
Power-Down Mode(3)
Other States
See the Operation Command Table
H
H
X
X
X
X
X
X
X
Clock Suspend on the Next Cycle(4)
H
L
X
X
X
X
X
X
X
Clock Suspend Termination on the Next Cycle
L
H
X
X
X
X
X
X
X
Clock Suspend Termination on the Next CycleL L
X X X X X X X
Notes:
1. H: HIGH level input, L: LOW level input, X: HIGH or LOW level input
2. The CLK pin and the other input are reactivated asynchronously by the transition of the CKE level from LOW to HIGH. The minimum setup time (tcka) required before all commands other than mode termination must be satisfied.
3. Both banks must be set to the inactive (idle) state in advance to switch to power-down mode or self-refresh mode.
4. The input must be command defined in the operation command table.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
19
IS42S16100E, IS45S16100E
TWO BANKS OPERATION COMMAND TRUTH TABLE(1,2)
Previous State
Next State
Operation
CS RASCAS WE A11 A10A9-A0 BANK 0BANK 1 BANK 0BANK 1
DESL
H X X X X X X
Any
Any
Any
Any
NOP
L H H H X X X
Any
Any
Any
Any
BST
L H H L
X X X
R/W/A I/A
A
I/A
I
I/A
I
I/A
I/A R/W/A
I/A
A
I/A
I
I/A
I
(3)
READ/READA
L H L H H H CA I/A R/W/A
I/A
RP
H H CA(3)
R/W
A
A
RP
H L CA(3)
I/A R/W/A
I/A
R
H L CA(3)
R/W
A
A
R
L H CA(3)
R/W/A I/A
RP
I/A
A
R/W
RP
A
L H CA(3)
L
L CA(3)
R/W/A I/A
R
I/A
L
L CA(3)
A
R/W
R
A
WRIT/WRITA
L H L
L H H CA(3)
I/A R/W/A
I/A
WP
H H CA(3)
R/W
A
A
WP
H L CA(3)
I/A R/W/A
I/A
W
H L CA(3)
R/W
A
A
W
L H CA(3)
R/W/A I/A
WP
I/A
L H CA(3)
A
R/W
WP
A
L
L CA(3)
R/W/A I/A
W
I/A
L
L CA(3)
A
R/W
W
A
ACT
L
L H H H RA RA
Any
I
Any
A
L RA RA
I
Any
A
Any
PRE/PALL
L
L H L
X H X
R/W/A/I I/A
I
I
X H X
I/A R/W/A/I
I
I
H L
X
I/A R/W/A/I
I/A
I
H L
X
R/W/A/I I/A
R/W/A/I I
L
L
X
R/W/A/I I/A
I
I/A
L
L
X
I/A R/W/A/I
I R/W/A/I
REF
L
L
L H X X X
I
I
I
I
MRS
L
L
L
L
OPCODE
I
I
I
I
Notes:
1. H: HIGH level input, L: LOW level input, X: HIGH or LOW level input, RA: Row Address, CA: Column Address
2. The device state symbols are interpreted as follows:
3.
I
Idle (inactive state)
A
Row Active State
R
Read
W Write
RP Read With Auto-Precharge
WP Write With Auto-Precharge
Any Any State
CA: A8,A9 = don’t care.
20
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
SIMPLIFIED STATE TRANSITION DIAGRAM (One Bank Operation)
SELF
REFRESH
SREFentry
SREFexit
MRS
MODE
REGISTER
SET
AUTO
REFRESH
REF
IDLE
CKE_
CKE
IDLE
POWER
DOWN
ACT
ACTIVE
POWER
DOWN
CKE_
CKE
BANK
ACTIVE
BST
BST
READ
WRIT
WRIT
READ
WRITA
READA
READ
WRITE
CKE_
READ
CKE
CLOCK
SUSPEND
READA
WRITA
WRITA
CKE_
CKE
WRITEWITH
AUTO
PRECHARGE
READA
POWERON
PRE
CKE
CKE_
READWITH
AUTO
PRECHARGE
PRE
PRE
POWERAPPLIED
CKE_
WRIT
CLOCK
SUSPEND
CKE
PRE
PRECHARGE
Automatic transition following the
completion of command execution.
Transition due to command input.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
21
IS42S16100E, IS45S16100E
Device Initialization At Power-On
Burst Length
(Power-On Sequence)
When writing or reading, data can be input or output data
continuously. In these operations, an address is input only
once and that address is taken as the starting address
internally by the device. The device then automatically
generates the following address. The burst length field
in the mode register stipulates the number of data items
input or output in sequence. In the IS42/4516100E product,
a burst length of 1, 2, 4, 8, or full page can be specified.
See the table on the next page for details on setting the
mode register.
As is the case with conventional DRAMs, the IS42/4516100E
product must be initialized by executing a stipulated poweron sequence after power is applied.
After power is applied and VDD and VDDQ reach their
stipulated voltages, set and hold the CKE and DQM pins
HIGH for 100 µs. Then, execute the precharge command
to precharge both bank. Next, execute the auto-refresh
command twice or more and define the device operation
mode by executing a mode register set command.
The mode register set command can be also set before
auto-refresh command.
Mode Register Settings
The mode register set command sets the mode register.
When this command is executed, pins A0 to A9, A10, and
A11 function as data input pins for setting the register, and
this data becomes the device internal OP code. This OP
code has four fields as listed in the table below.
Input Pin
A11, A10, A9, A8, A7
A6, A5, A4
A3
A2, A1, A0
Field
Mode Options
CAS Latency
Burst Type
Burst Length
Note that the mode register set command can be executed
only when both banks are in the idle (inactive) state. If
the Mode Register Set command is executed, the next
command (except NOP or Deselect) cannot be executed
until at least two clock cycles later, in order to avoid
violating tMCD.
CAS Latency
Burst Type
The burst data order during a read or write operation
is stipulated by the burst type, which can be set by the
mode register set command. The IS42/4516100E product
supports sequential mode and interleaved mode burst
type settings. See the table on the next page for details
on setting the mode register. See the “Burst Length and
Column Address Sequence” item for details on DQ data
orders in these modes.
Write Mode
Burst write or single write mode is selected by the OP
code (A11, A10, A9) of the mode register.
A burst write operation is enabled by setting the OP code
(A11, A10, A9) to (0,0,0). A burst write starts on the same
cycle as a write command set. The write start address is
specified by the column address and bank select address
at the write command set cycle.
A single write operation is enabled by setting OP code (A11,
A10, A9) to (0, 0,1). In a single write operation, data is only
written to the column address and bank select address
specified by the write command set cycle without regard
to the bust length setting.
During a read operation, the between the execution of the
read command and data output is stipulated as the CAS
latency. This period can be set using the mode register
set command. The optimal CAS latency is determined
by the clock frequency and device speed grade. See the
“Operating Frequency / Latency Relationships” item for
details on the relationship between the clock frequency
and the CAS latency. See the table on the next page for
details on setting the mode register.
22
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
MODE REGISTER
A11A10
A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
WRITE MODE LT MODE BT
BL
Address Bus (Ax)
Mode Register (Mx)
Burst Length
M2 M1 M0
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
Burst Type
M3
0
1
Sequential Interleaved
1
1
2
2
4
4
8
8
Reserved Reserved
Reserved Reserved
Reserved Reserved
Full Page Reserved
Type
Sequential
Interleaved
M6 M5 M4 CAS Latency
Latency Mode 0
0
0
Reserved
0
0
1
Reserved
0
1
0
2
0
1
1
3
1
0
0
Reserved
1
0
1
Reserved
1
1
0
Reserved
1
1
1
Reserved
M11
0
0
M10
0
0
M9
1
0
M8
0
0
M7
0
0
Write Mode
Burst Read & Single Write
Burst Read & Burst Write
Note: Other values for these bits are reserved.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
23
IS42S16100E, IS45S16100E
Burst Length and Column Address Sequence
Burst Length
Column Address Address Sequence
A2 A1 A0
Sequential
Interleaved
2
X
X
X
X
0
1
0-1
1-0
0-1
1-0
4
X
X
X
X
0
0
1
1
0
1
0
1
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
8
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
Full Page
(256)
n
n
n
Cn, Cn+1, Cn+2
Cn+3, Cn+4.....
...Cn-1(Cn+255),
Cn(Cn+256).....
None
Notes:
1. The burst length in full page mode is 256.
24
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Bank Select and Precharge Address Allocation
Row
X0
X1
X2
X3
X4
X5
X6
X7
—
—
—
—
—
—
—
—
Row Address
Row Address
Row Address
Row Address
Row Address
Row Address
Row Address
Row Address
X8
—
Row Address
Command)
X9
X10
—
0
1
Row Address
Precharge of the Selected Bank (Precharge Command) Row Address
Precharge of Both Banks (Precharge Command)
(Active
X11
0
1
Bank 0 Selected (Precharge and Active Command)
Bank 1 Selected (Precharge and Active Command)
Column
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
Y10
Y11
—
—
—
—
—
—
—
—
—
—
0
1
0
1
Column Address
Column Address
Column Address
Column Address
Column Address
Column Address
Column Address
Column Address
Don’t Care
Don’t Care
Auto-Precharge - Disabled
Auto-Precharge - Enables
Bank 0 Selected (Read and Write Commands)
Bank 1 Selected (Read and Write Commands)
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
25
IS42S16100E, IS45S16100E
Burst Read
The read cycle is started by executing the read command.
The address provided during read command execution is
used as the starting address. First, the data corresponding to
this address is output in synchronization with the clock signal
after the CAS latency period. Next, data corresponding to
an address generated automatically by the device is output
in synchronization with the clock signal.
The output buffers go to the LOW impedance state CAS
latency minus one cycle after the read command, and go
to the HIGH impedance state automatically after the last
data is output. However, the case where the burst length
is a full page is an exception. In this case the output buffers
must be set to the high impedance state by executing a
burst stop command.
Note that upper byte and lower byte output data can
be masked independently under control of the signals
applied to the U/LDQM pins. The delay period (tqmd) is
fixed at two, regardless of the CAS latency setting, when
this function is used.
The selected bank must be set to the active state before
executing this command.
CLK
COMMAND
READA0
tQMD=2
UDQM
LDQM
DQ8-DQ15
DOUT A0
DQ0-DQ7
DOUT A0
READ(CA=A,BANK0)
CAS latency = 3, burst length = 4
HI-Z
DOUT A1
DOUT A2
DOUT A3
HI-Z
HI-Z
DATAMASK(LOWERBYTE)
DATAMASK(UPPERBYTE)
Burst Write
The write cycle is started by executing the command. The
address provided during write command execution is used
as the starting address, and at the same time, data for this
address is input in synchronization with the clock signal.
Next, data is input in other in synchronization with the
clock signal. During this operation, data is written to
address generated automatically by the device. This cycle
terminates automatically after a number of clock cycles
determined by the stipulated burst length. However, the
case where the burst length is a full page is an exception.
In this case the write cycle must be terminated by executing
a burst stop command. The latency for DQ pin data input
is zero, regardless of the CAS latency setting. However, a
wait period (write recovery: tdpl) after the last data input is
required for the device to complete the write operation.
Note that the upper byte and lower byte input data can
be masked independently under control of the signals
applied to the U/LDQM pins. The delay period (tdmd) is
fixed at zero, regardless of the CAS latency setting, when
this function is used.
The selected bank must be set to the active state before
executing this command.
CLK
COMMAND
DQ
WRITE
DIN 0
DIN 1
DIN 2
DIN 3
BURSTLENGTH
CAS latency = 2,3, burst length = 4
26
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Read With Auto-Precharge
The read with auto-precharge command first executes a
burst read operation and then puts the selected bank in
the precharged state automatically. After the precharge
completes, the bank goes to the idle state. Thus this
command performs a read command and a precharge
command in a single operation.
During this operation, the delay period (tpql) between the
last burst data output and the start of the precharge operation differs depending on the CAS latency setting.
When the CAS latency setting is two, the precharge operation starts on one clock cycle before the last burst data is
output (tpql = –1). When the CAS latency setting is
three, the precharge operation starts on two clock cycles
before the last burst data is output (tpql = –2). Therefore,
the selected bank can be made active after a delay of trp
from the start position of this precharge operation.
The selected bank must be set to the active state before
executing this command.
The auto-precharge function is invalid if the burst length
is set to full page.
CAS Latency
tpql
3
–2
2
–1
CLK
COMMAND
READA 0
ACT0
tPQL
DQ
DOUT0
READWITHAUTO-PRECHARGE
(BANK0)
DOUT1
DOUT2
PRECHARGESTART
DOUT3
tRP
CAS latency = 2, burstlength = 4
CLK
COMMAND
ACT0
READA 0
tPQL
DQ
READWITHAUTO-PRECHARGE
(BANK0)
DOUT0
PRECHARGESTART
DOUT1
DOUT2
DOUT3
tRP
CAS latency = 3, burstlength = 4
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
27
IS42S16100E, IS45S16100E
Write With Auto-Precharge
The write with auto-precharge command first executes a
burst write operation and then puts the selected bank in
the precharged state automatically. After the precharge
completes the bank goes to the idle state. Thus this
command performs a write command and a precharge
command in a single operation.
During this operation, the delay period (tdal) between the
last burst data input and the completion of the precharge
operation differs depending on the CAS latency setting.
The delay (tdal) is trp plus two CLK periods. That is, the
precharge operation starts two clock periods after the last
burst data input.
Therefore, the selected bank can be made active after a
delay of tdal.
The selected bank must be set to the active state before
executing this command.
The auto-precharge function is invalid if the burst length
is set to full page.
CAS Latency
tdal
3
2CLK
+trp
2
2CLK
+trp
CLK
COMMAND
ACT0
WRITEA0
PRECHARGESTART
DQ
DIN0
DIN1
DIN2
DIN3
tRP
tDAL
WRITEWITHAUTO-PRECHARGE
(BANK0)
CAS latency = 2, burstlength = 4
CLK
COMMAND
ACT0
WRITEA0
PRECHARGESTART
DQ
DIN0
DIN1
WRITEWITHAUTO-PRECHARGE
(BANK0)
DIN2
DIN3
tRP
tDAL
CAS latency = 3, burstlength = 4
28
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Interval Between Read Command
A new command can be executed while a read cycle is
in progress, i.e., before that cycle completes. When the
second read command is executed, after the CAS latency
has elapsed, data corresponding to the new read command
is output in place of the data due to the previous read
command.
The interval between two read command (tccd) must be
at least one clock cycle.
The selected bank must be set to the active state before
executing this command.
CLK
COMMAND
READA0
READB0
DQ
DOUT A0
DOUTB0
DOUTB1
DOUTB2
DOUTB3
tCCD
READ(CA=A,BANK0) READ(CA=B,BANK0)
CAS latency = 2, burstlength = 4
Interval Between Write Command
A new command can be executed while a write cycle is in
progress, i.e., before that cycle completes. At the point the
second write command is executed, data corresponding
to the new write command can be input in place of the
data for the previous write command.
The interval between two write commands (tccd) must be
at least one clock cycle.
The selected bank must be set to the active state before
executing this command.
CLK
tCCD
COMMAND
DQ
WRITEA0
WRITEB0
DIN A0
DINB0
DINB1
DINB2
DINB3
WRITE(CA=A,BANK0) WRITE(CA=B,BANK0)
CAS latency = 3, burstlength = 4
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
29
IS42S16100E, IS45S16100E
Interval Between Write and Read Commands
A new read command can be executed while a write cycle
is in progress, i.e., before that cycle completes. Data
corresponding to the new read command is output after
the CAS latency has elapsed from the point the new read
command was executed. The I/On pins must be placed in
the HIGH impedance state at least one cycle before data
is output during this operation.
The interval (tccd) between command must be at least
one clock cycle.
The selected bank must be set to the active state before
executing this command.
CLK
tCCD
COMMAND
DQ
WRITEA0
READB0
DIN A0
HI-Z
WRITE(CA=A,BANK0)
DOUTB0
DOUTB1
DOUTB2
DOUTB3
DOUTB0
DOUTB1
DOUTB2
READ(CA=B,BANK0)
CAS latency = 2, burstlength = 4
CLK
tCCD
COMMAND
DQ
WRITEA0
READB0
DIN A0
WRITE(CA=A,BANK0)
HI-Z
DOUTB3
READ(CA=B,BANK0)
CAS latency = 3, burstlength = 4
30
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Interval Between Read and Write Commands
A read command can be interrupted and a new write
command executed while the read cycle is in progress,
i.e., before that cycle completes. Data corresponding
to the new write command can be input at the point
new write command is executed. To prevent collision
between input and output data at the DQn pins during
this operation, the
output data must be masked using the U/LDQM pins. The
interval (tccd) between these commands must be at least
one clock cycle.
The selected bank must be set to the active state before
executing this command.
CLK
tCCD
COMMAND
READA0
WRITEB0
U/LDQM
DQ
HI-Z
DINB0
READ(CA=A,BANK0)
DINB1
DINB2
DINB3
WRITE(CA=B,BANK0)
CAS latency = 2, 3, burstlength = 4
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
31
IS42S16100E, IS45S16100E
Precharge
Read Cycle Interruption
The precharge command sets the bank selected by pin A11
to the precharged state. This command can be executed at
a time tras following the execution of an active command
to the same bank. The selected bank goes to the idle
state at a time trp following the execution of the precharge
command, and an active command can be executed again
for that bank.
Using the Precharge Command
If pin A10 is low when this command is executed, the bank
selected by pin A11 will be precharged, and if pin A10 is
HIGH, both banks will be precharged at the same time. This
input to pin A11 is ignored in the latter case.
A read cycle can be interrupted by the execution of the
precharge command before that cycle completes. The
delay time (trql) from the execution of the precharge
command to the completion of the burst output is the
clock cycle of CAS latency.
CAS Latency
trql
3
3
2
2
CLK
tRQL
COMMAND
READA0
DQ
PRE0
DOUT A0 DOUT A1 DOUT A2
READ(CA=A,BANK0)
HI-Z
PRECHARGE(BANK0)
CAS latency = 2, burstlength = 4
CLK
tRQL
COMMAND
READA0
DQ
PRE0
DOUT A0 DOUT A1 DOUT A2
READ(CA=A,BANK0)
HI-Z
PRECHARGE(BANK0)
CAS latency = 3, burstlength = 4
32
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Write Cycle Interruption Using the
Precharge Command
A write cycle can be interrupted by the execution of the
precharge command before that cycle completes. The
delay time (twdl) from the precharge command to the point
where burst input is invalid, i.e., the point where input data
is no longer written to device internal memory is zero clock
cycles regardless of the CAS.
Inversely, to write all the burst data to the device, the
precharge command must be executed after the write
data recovery period (tdpl) has elapsed. Therefore, the
precharge command must be executed two clock cycles
after the input of the last burst data item.
To inhibit invalid write, the DQM signal must be asserted
HIGH with the precharge command.
This precharge command and burst write command must
be of the same bank, otherwise it is not precharge interrupt
but only another bank precharge of dual bank operation.
CAS Latency
twdl
3
0
2
0
tdpl
2
2
CLK
tWDL=0
COMMAND
PRE0
WRITEA0
DQM
DQ
DIN A0
DIN A1
DIN A2
DIN A3
MASKEDBYDQM
WRITE(CA=A,BANK0)
PRECHARGE(BANK0)
CAS latency = 2, burstlength = 4
CLK
tDPL
COMMAND
DQ
WRITEA0
DIN A0 DIN
PRE0
A1 DIN A2
WRITE(CA=A,BANK0)
DIN A3
PRECHARGE(BANK0)
CAS latency = 3, burstlength = 4
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
33
IS42S16100E, IS45S16100E
Read Cycle (Full Page) Interruption Using
the Burst Stop Command
The IS42/4516100E can output data continuously from
the burst start address (a) to location a+255 during a
read cycle in which the burst length is set to full page.
The IS42/4516100E repeats the operation starting at
the 256th cycle with the data output returning to location
(a) and continuing with a+1, a+2, a+3, etc. A burst stop
command must be executed to terminate this cycle. A
precharge command must be executed within the ACT
to PRE command period (tras max.) following the burst
stop command.
After the period (trbd) required for burst data output to
stop following the execution of the burst stop command
has elapsed, the outputs go to the HIGH impedance
state. This period (trbd) is two clock cycle when the
CAS latency is two and three clock cycle when the CAS
latency is three.
CAS Latency
3
2
trbd
3
2
CLK
tRBD
COMMAND
READA0
DQ
BST
DOUT A0 DOUT A0
DOUT A1
DOUT A2
DOUT A3
HI-Z
BURSTSTOP
READ(CA=A,BANK0)
CAS latency = 2, burstlength = 4
CLK
tRBD
COMMAND
BST
READA0
DQ
DOUT A0 DOUT A0
READ(CA=A,BANK0)
DOUT A1
DOUT A2
DOUT A3
HI-Z
BURSTSTOP
CAS latency = 3, burstlength = 4
34
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Write Cycle (Full Page) Interruption Using
the Burst Stop Command
must be executed within the ACT to PRE command
period (tras max.) following the burst stop command.
After the period (twbd) required for burst data input to
stop following the execution of the burst stop command
has elapsed, the write cycle terminates. This period
(twbd) is zero clock cycles, regardless of the CAS
latency.
The IS42/4516100E can input data continuously from
the burst start address (a) to location a+255 during a
write cycle in which the burst length is set to full page.
The IS42/4516100E repeats the operation starting at
the 256th cycle with data input returning to location (a)
and continuing with a+1, a+2, a+3, etc. A burst stop
command must be executed to terminate this cycle. A
precharge command
CLK
tWBD=0
COMMAND
WRITEA0
BST
tRP
PRE0
INVALIDDATA
DQ
DIN A0
DIN A1
DIN A
DIN A1
DIN A2
READ(CA=A,BANK0)
BURSTSTOP
PRECHARGE(BANK0)
Don'tCare
Burst Data Interruption Using the U/LDQM
Pins (Read Cycle)
Burst data output can be temporarily interrupted (masked)
during a read cycle using the U/LDQM pins. Regardless of
the CAS latency, two clock cycles (tqmd) after one of the
U/LDQM pins goes HIGH, the corresponding outputs go
to the HIGH impedance state. Subsequently, the outputs
are maintained in the high impedance state as long as
that U/LDQM pin remains HIGH. When the U/LDQM pin
goes LOW, output is resumed at a time tqmd later. This
output control operates independently on a byte basis
with the UDQM pin controlling upper byte output (pins
DQ8-DQ15) and the LDQM pin controlling lower byte
output (pins DQ0 to DQ7).
Since the U/LDQM pins control the device output buffers
only, the read cycle continues internally and, in particular,
incrementing of the internal burst counter continues.
CLK
COMMAND
READA0
tQMD=2
UDQM
LDQM
DQ8-DQ15
DOUT A0
DQ0-DQ7
DOUT A0
READ(CA=A,BANK0)
HI-Z
DOUT A1
DOUT A2
DOUT A3
HI-Z
HI-Z
DATAMASK(LOWERBYTE)
DATAMASK(UPPERBYTE)
CAS latency = 2, burstlength = 4
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
35
IS42S16100E, IS45S16100E
Burst Data Interruption U/LDQM Pins (Write
Cycle)
Burst data input can be temporarily interrupted (muted )
during a write cycle using the U/LDQM pins. Regardless
of the CAS latency, as soon as one of the U/LDQM pins
goes HIGH, the corresponding externally applied input
data will no longer be written to the device internal circuits.
Subsequently, the corresponding input continues to be
muted as long as that U/LDQM pin remains HIGH.
that pin is dropped to LOW and data will be written to the
device. This input control operates independently on a byte
basis with the UDQM pin controlling upper byte input (pin
DQ8 to DQ15) and the LDQM pin controlling the lower
byte input (pins DQ0 to DQ7).
Since the U/LDQM pins control the device input buffers
only, the cycle continues internally and, in particular,
incrementing of the internal burst counter continues.
The IS42/4516100E will revert to accepting input as soon
as
CLK
COMMAND
WRITEA0
UDQM
tDMD=0
LDQM
DQ8-DQ15
DIN A1
DQ0-DQ7
DIN A0
WRITE(CA=A,BANK0)
DIN A3
DIN A3
DATAMASK(LOWERBYTE)
DATAMASK(UPPERBYTE)
DIN A2
Don'tCare
CAS latency = 2, burstlength = 4
Burst Read and Single Write
The burst read and single write mode is set up using the
mode register set command. During this operation, the burst
read cycle operates normally, but the write cycle only writes
a single data item for each write cycle. The CAS latency
and DQM latency are the same as in normal mode.
CLK
COMMAND
DQ
WRITEA0
DIN A0
WRITE(CA=A,BANK0)
CAS latency = 2, 3
36
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Bank Active Command Interval
When the selected bank is precharged, the period trp
has elapsed and the bank has entered the idle state,
the bank can be activated by executing the active
command. If the other bank is in the idle state at that
time, the active command can be executed for that bank
after the period trrd has elapsed. At that point both
banks will be in the active state. When a bank active
command has been executed, a precharge command
must be executed for that bank within the ACT to PRE
command period (tras max). Also note that a precharge
command cannot be executed for an active bank before
tras (min) has elapsed.
After a bank active command has been executed and
the trcd period has elapsed, read write (including autoprecharge) commands can be executed for that bank.
CLK
tRRD
COMMAND
ACT0
ACT1
BANKACTIVE(BANK0)
BANKACTIVE(BANK1)
CLK
tRCD
COMMAND
ACT0
READ0
BANKACTIVE(BANK0)
BANKACTIVE(BANK0)
CAS latency = 3
Clock Suspend
When the CKE pin is dropped from HIGH to LOW during
a read or write cycle, the IS42/4516100E enters clock
suspend mode on the next CLK rising edge.This command reduces the device power dissipation by stopping the
device internal clock. Clock suspend mode continues as
long as the CKE pin remains low. In this state, all inputs
other than CKE pin are invalid and no other commands
can be executed. Also, the device internal states are
maintained. When the CKE pin goes from LOW to HIGH
clock suspend mode is terminated on the next CLK rising
edge and device operation resumes.
The next command cannot be executed until the recovery
period (tcka) has elapsed.
Since this command differs from the self-refresh command
described previously in that the refresh operation is not
performed automatically internally, the refresh operation
must be performed within the refresh period (tref). Thus
the maximum time that clock suspend mode can be held
is just under the refresh cycle time.
CLK
CKE
COMMAND
READ0
DQ
DOUT 0
READ(BANK0)
DOUT 1
DOUT 2
DOUT 3
CLOCKSUSPEND
CAS latency = 2, burstlength = 4
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
37
IS42S16100E, IS45S16100E
OPERATION TIMING EXAMPLE
Power-On Sequence, Mode Register Set Cycle
T0
T1
T2
T3
T10
T17
T18
T19
T20
CLK
tCHI
tCK
CKE HIGH
tCS
tCL
tCH
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
ROW
CODE
tAS
A10
tAS
tAH
tAH
CODE
BANK0&1
tAS
A11
ROW
tAH
BANK1
CODE
BANK0
DQM HIGH
DQ
WAITTIME
T=100µs
<PALL>
tRC
tRP
<REF>
<REF>
tRAS
tRC
tMCD
tRC
<MRS>
<ACT>
Undefined
CAS latency = 2, 3
38
Don'tCare
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Power-Down Mode Cycle
T0
T1
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
T2
tCHI
T3
tCL
Tn
Tn+1
Tn+2
Tn+3
tCKH
tCKS
tCKA
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
tAH
ROW
A0-A9
tAS
A10
A11
tAH
BANK0&1
ROW
BANK0OR1
BANK1
BANK1
BANK0
BANK0
DQM
DQ
POWERDOWNMODE
tRP
<PRE>
<PALL>
<SBY>
EXIT
POWERDOWNMODE
tRAS
tRC
<ACT>
Undefined
CAS latency = 2, 3
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
Don'tCare
39
IS42S16100E, IS45S16100E
Auto-Refresh Cycle
T0
T1
T2
T3
Tl
Tm
Tn
Tn+1
CLK
tCKS
tCK
tCS
tCH
tCHI
tCL
CKE
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
ROW
A0-A9
tAS
A10
tAH
ROW
BANK0&1
BANK1
A11
BANK0
DQM
DQ
tRC
tRP
<PALL>
<REF>
<REF>
tRAS
tRC
tRC
tRC
<REF>
<ACT>
Undefined
CAS latency = 2, 3
40
Don'tCare
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Self-Refresh Cycle
T0
T1
T2
T3
Tm
Tm+1
Tm+2
Tn
CLK
tCKS
CKE
tCK
tCHI
tCL
tCKS
tCKA
tCS
tCH
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
A0-A9
A10
BANK0&1
A11
DQM
DQ
tRP
<PALL>
SELFREFRESHMODE
<SELF>
tXSR
tRC
<REF>
Undefined
CAS latency = 2, 3
Don'tCare
Note:
1: A8, A9 = Don’t Care.
2. Self-Refresh Mode is not supported for A2 grade with Ta > 85oC.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
41
IS42S16100E, IS45S16100E
Read Cycle
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
A0-A9
COLUMNm
ROW
tAS
ROW
BANK0AND1
tAH
NOPRE
ROW
A10
tAH
tAS
A11
(1)
ROW
BANK0OR1
BANK1
BANK1
BANK1
BANK1
BANK0
tCS
BANK0
tCH BANK0
tQMD
BANK0
DQM
tAC
tAC
tOH
DQ
DOUT m
tAC
tAC
tOH
tOH
tOH
DOUT m+1
DOUT m+2
DOUT m+3
tLZ
tCAC
tRCD
tRQL
tRAS
tHZ
tRCD
tRAS
tRP
tRC
tRC
<ACT>
<READ>
<PRE>
<PALL>
<ACT>
Undefined
CAS latency = 2, burstlength = 4
Don'tCare
Note 1: A8,A9 = Don’t Care.
42
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Read Cycle / Auto-Precharge
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
A0-A9
ROW
tAS
COLUMNm
ROW
AUTOPRE
ROW
BANK1
BANK1
tAH
ROW
A10
tAH
tAS
A11
(1)
BANK1
BANK0
tCS
BANK0
BANK0
tCH
tQMD
DQM
tAC
DQ
tAC
tAC
tAC
tOH
tOH
tOH
tOH
DOUT m
DOUT m+1
DOUT m+2
DOUT m+3
tLZ
tRCD
tCAC
tRAS
tPQL
tHZ
tRCD
tRAS
tRP
tRC
tRC
<ACT>
<READA>
<ACT>
Undefined
CAS latency = 2, burstlength = 4
Don'tCare
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
43
IS42S16100E, IS45S16100E
Read Cycle / Full Page
T0
T1
T2
T3
T4
T5
T6
T260
T261
T262
T263
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
tAS
tAH
ROW
A10
tAH
tAS
A11
(1)
COLUMN
ROW
BANK0
tCS
NOPRE
BANK0OR1
BANK0
BANK0
tCH
tQMD
DQM
tAC
tAC
tOH
DQ
DOUT 0m
tAC
tOH
DOUT 0m+1
tAC
tOH
DOUT 0m-1
tAC
tOH
tOH
DOUT 0m
DOUT 0m+1
tLZ
tRCD
tCAC
(BANK0)
tRAS
tHZ
tRBD
tRP
(BANK0)
tRC
(BANK0)
<ACT0>
<READ0>
<BST>
<PRE0>
Undefined
CAS latency = 2, burstlength = full page
Don'tCare
Note 1: A8,A9 = Don’t Care.
44
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Read Cycle / Ping-Pong Operation (Bank Switching)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
(1)
ROW
COLUMN
tAS
tAH
AUTOPRE
tAH
NOPRE
ROW
COLUMN
AUTOPRE
ROW
ROW
A10
tAS
A11
(1)
ROW
BANK0
BANK0
ROW
BANK1
tCS
NOPRE
BANK0OR1
BANK1
BANK0
BANK0OR1
BANK0
BANK1
tCH
tQMD
DQM
tAC
tAC
tAC
tOH
DQ
DOUT 0m
tRRD
(BANK0TO1)
tRCD
(BANK0)
tCAC
(BANK1)
DOUT 1m
tCAC
(BANK1)
tRP
(BANK0)
<ACT1>
<READ1>
<READA1>
tHZ
tRCD
(BANK0)
tRAS
(BANK0)
tRC
(BANK0)
tRAS
(BANK1)
tRC
(BANK1)
<READ0>
<READA0>
tOH
DOUT 1m+1
tLZ
tHZ
tRCD
(BANK1)
tRAS
(BANK0)
tRC
(BANK0)
<ACT0>
DOUT 0m+1
tLZ
tAC
tOH
tOH
<PRE0>
<ACT0>
tRP
(BANK1)
<PRE1>
Undefined
CAS latency = 2, burstlength = 2
Don'tCare
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
45
IS42S16100E, IS45S16100E
Write Cycle
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
A0-A9
ROW
tAS
COLUMNm
ROW
BANK0AND1
tAH
NOPRE
ROW
A10
tAH
tAS
A11
(1)
ROW
BANK1
BANK0OR1
BANK1
BANK0
BANK1
BANK0
BANK0
BANK1
BANK0
tCS
tCH
DQM
tDS
tDH tDS
DIN m
DQ
tDH tDS
DIN m+1
tDH tDS
DIN m+2
tDH
DIN m+3
tDPL
tRCD
tRAS
tRCD
tRP
tRAS
tRC
<ACT>
tRC
<WRIT>
<PRE>
<PALL>
<ACT>
Undefined
CAS latency = 2, burstlength = 4
Don'tCare
Note 1: A8,A9 = Don’t Care.
46
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Write Cycle / Auto-Precharge
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
A0-A9
ROW
tAS
COLUMNm
ROW
AUTOPRE
ROW
BANK1
BANK1
tAH
ROW
A10
tAH
tAS
A11
(1)
BANK1
BANK0
BANK0
tCS
BANK0
tCH
DQM
tDS
tDH tDS
DIN m
DQ
tDH tDS
DIN m+1
tDH tDS
DIN m+2
tDH
DIN m+3
tDAL
tRCD
tRAS
tRCD
tRP
tRAS
tRC
<ACT>
tRC
<WRITA>
<ACT>
Undefined
CAS latency = 2, burstlength = 4
Don'tCare
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
47
IS42S16100E, IS45S16100E
Write Cycle / Full Page
T0
T1
T2
T3
T4
T5
T258
T259
T260
T261
T262
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
A0-A9
COLUMNm
ROW
tAS
tAH
ROW
A10
tAH
tAS
A11
(1)
BANK0
NOPRE
BANK0OR1
BANK0
BANK0
tCH
tCS
DQM
tDS
DQ
tDH tDS
DIN 0m
tDH tDS
DIN 0m+1
tDH tDS
DIN 0m+2
tDH
DIN 0m-1
DIN0m
tDPL
tRCD
tRAS
tRP
tRC
<ACT0>
<WRIT0>
<BST>
<PRE0>
Undefined
CAS latency = 2, burst length = full page
Don'tCare
Note 1: A8,A9 = Don’t Care.
48
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Write Cycle / Ping-Pong Operation
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
(1)
ROW
COLUMN
tAS
tAH
AUTOPRE
tAH
NOPRE
ROW
COLUMN
AUTOPRE
ROW
A10
ROW
tAS
A11
(1)
ROW
BANK0
BANK0
ROW
BANK1
NOPRE
BANK0OR1
BANK1
BANK0
BANK0
tCH
tCS
DQM
tDS
tDH tDS
DIN 0m
DQ
tDH tDS
DIN 0m+1
tRRD
(BANK0TO1)
tRCD
(BANK0)
DIN 0m+2
tDH tDS
DIN 0m+3
tDH tDS
DIN 1m
tDH tDS
DIN 1m+1
tDH tDS
DIN 1m+2
tDH
DIN 1m+3
tDPL
tRCD
(BANK1)
tRAS
(BANK0)
tRC
(BANK0)
<ACT0>
tDH tDS
tDPL
tRP
(BANK0)
tRAS
(BANK1)
tRC
(BANK1)
<WRIT0>
<WRITA0>
<ACT1>
<WRIT1>
<WRITA1>
<PRE0>
tRCD
(BANK0)
tRAS
(BANK0)
tRC
(BANK0)
<ACT0>
Undefined
CAS latency = 2, burst length = 2
Don'tCare
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
49
IS42S16100E, IS45S16100E
Read Cycle / Page Mode
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
tAS
tAH
tAS
A11
(1)
COLUMNn
COLUMNo
tAH
ROW
A10
(1)
(1)
COLUMNm
ROW
BANK1
BANK0
tCS
NOPRE
NOPRE
BANK1
BANK1
BANK0
BANK0
tQMD
AUTOPRE
BANK0AND1
NOPRE
BANK0OR1
BANK1
BANK1
BANK0
BANK0
tCH
DQM
tAC
tAC
tOH
DQ
tAC
tOH
DOUT m
DOUT m+1
tAC
tOH
DOUT n
tAC
tOH
DOUT n+1
tAC
tOH
DOUTo
tLZ
tRCD
tRAS
tRC
<ACT>
tHZ
tCAC
<READ>
tOH
DOUT o+1
tCAC
<READ>
tCAC
<READ>
<READA>
tRQL
tRP
<PRE>
<PALL>
Undefined
CAS latency = 2, burst length = 2
Don'tCare
Note 1: A8,A9 = Don’t Care.
50
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Read Cycle / Page Mode; Data Masking
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
A0-A9
COLUMNn
COLUMNo
tAH
ROW
A10
(1)
(1)
COLUMNm
ROW
tAS
tAH
tAS
A11
(1)
BANK1
BANK0
tCS
NOPRE
NOPRE
BANK1
BANK1
BANK0
BANK0
tQMD
NOPRE
AUTOPRE
BANK0AND1
NOPRE
BANK0OR1
BANK1
BANK1
BANK0
BANK0
tCH
tQMD
DQM
tAC
tAC
tAC
tOH
DQ
tOH
DOUT m
DOUT m+1
tLZ
tRCD
tRAS
tRC
<ACT>
tCAC
<READ>
tAC
tOH
DOUT n
<MASK>
tOH
tOH
DOUTo
DOUT o+1
tLZ
tHZ
tCAC
tAC
tHZ
tCAC
<READ,ENB>
<READA,ENB>
tRQL
tRP
<PRE>
<PALL>
Undefined
CAS latency = 2, burst length = 2
Don'tCare
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
51
IS42S16100E, IS45S16100E
Write Cycle / Page Mode
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
tAS
(1)
(1)
COLUMNn
COLUMNo
tAH
ROW
A10
tAH
tAS
A11
(1)
COLUMNm
ROW
BANK1
BANK0
tCS
NOPRE
NOPRE
BANK1
BANK1
AUTOPRE
BANK0AND1
NOPRE
BANK0OR1
BANK1
BANK1
BANK0
BANK0
BANK0
BANK0
tCH
DQM
tDS
tDH tDS
DIN m
DQ
tDH tDS
DIN m+1
tDH tDS
DINn
tDH tDS
DINn+1
tDH tDS
tDH
DINo
DINo+1
tRCD
tRAS
tRC
<ACT>
tDPL
tRP
<WRIT>
<WRIT>
<WRIT>
<WRITA>
<PRE>
<PALL>
Undefined
CAS latency = 2, burst length = 2
Don'tCare
Note 1: A8,A9 = Don’t Care.
52
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Write Cycle / Page Mode; Data Masking
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
tAS
tAH
tAS
A11
COLUMNn
COLUMNo
tAH
ROW
A10
(1)
(1)
(1)
COLUMNm
ROW
BANK1
BANK0
tCS
AUTOPRE
BANK0AND1
NOPRE
NOPRE
BANK1
BANK1
NOPRE
BANK1OR0
BANK0
BANK0
BANK1
BANK0
BANK1
BANK0
tCH
DQM
tDS
tDH tDS
DIN m
DQ
tDH tDS
DIN m+1
tDH
tDS
DINn
tDH tDS
DINo
tRCD
tRAS
tRC
<ACT>
tDH
DINo+1
tDPL
tRP
<WRIT>
<WRIT>
<MASK>
<WRIT>
<WRITA>
<PRE>
<PALL>
Undefined
CAS latency = 2, burst length = 2
Don'tCare
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
53
IS42S16100E, IS45S16100E
Read Cycle / Clock Suspend
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCKS
tCL
tCKH
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
A0-A9
tAS
ROW
tAH
AUTOPRE
BANK0AND1
tAH
NOPRE
BANK0OR1
BANK1
BANK1
BANK0
BANK0
ROW
ROW
A10
tAS
A11
(1)
COLUMNm
ROW
BANK1
BANK0
tCS
BANK1
BANK0
tCH
tQMD
DQM
tAC
tAC
tOH
DQ
tOH
DOUT m
DOUT m+1
tLZ
tRCD
tHZ
tCAC
tRAS
tRAS
tRP
tRC
<ACT0>
tRC
<READ>
<READA>
<SPND>
<SPND>
<PRE>
<PALL>
<ACT>
Undefined
CAS latency = 2, burst length = 2
Don'tCare
Note 1: A8,A9 = Don’t Care.
54
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Write Cycle / Clock Suspend
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL tCKS
tCKH
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
A0-A9
COLUMNm
ROW
tAS
ROW
tAH
AUTOPRE
BANK0AND1
tAH
NOPRE
BANK0OR1
BANK1
BANK1
BANK0
BANK1
BANK0
BANK0
ROW
ROW
A10
tAS
A11
(1)
BANK1
BANK0
tCS
tCH
DQM
tDS
tDH
DIN m
DQ
tRCD
tDS
tDH
DIN m+1
tDPL
tRAS
tRAS
tRP
tRC
<ACT>
tRC
<WRIT,SPND> <SPND>
<WRITA,SPND>
<PRE>
<PALL>
<ACT>
Undefined
T0
CAS latency = 2, burst length = 2
Note 1: A8,A9 = Don’t Care.
CLK
tCKS
t
tCS
tC
t
CKE
CS
tC
RAS
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
55
CAS
tC
IS42S16100E, IS45S16100E
Read Cycle / Precharge Termination
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
tAS
COLUMNn
ROW
AUTOPRE
tAH
ROW
ROW
A10
tAH
tAS
A11
(1)
(1)
COLUMNm
ROW
BANK0
NOPRE
BANK0OR1
BANK0
BANK0
tCS
BANK1
BANK0
tCH
tQMD
NOPRE
BANK1
BANK0
DQM
tAC
tAC
tOH
DQ
DOUT m
tAC
tOH
tHZ
tOH
DOUT m+1
DOUT m+2
tLZ
tRCD
tCAC
tRAS
tRQL
tRCD
tRP
tRAS
tRC
<ACT0>
tCAC
tRC
<READ0>
<PRE0>
<ACT>
<READ>
<READA>
Undefined
CAS latency = 2, burst length = 4
Don'tCare
Note 1: A8,A9 = Don’t Care.
56
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Write Cycle / Precharge Termination
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
tAS
COLUMNn
ROW
AUTOPRE
tAH
ROW
ROW
A10
BANK0OR1
NOPRE
tAH
tAS
A11
(1)
(1)
COLUMNm
ROW
BANK0
BANK0
NOPRE
BANK1
BANK0
tCS
tCH
tCS
tDH
tDS
tDH
BANK1
BANK0
tCH
BANK0
tCS
DQM
tDH
tDS
tDS
DQ
DIN 0m
DIN 0m+1
DIN 0m+2
DIN 0n
tRCD
tRCD
tRAS
tRAS
tRP
tRC
<ACT0>
tDH
tDS
tRC
<WRIT0>
<PRE0>
<ACT>
<WRIT>
<WRITA>
Undefined
CAS latency = 2, burst length = 4
Don'tCare
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
57
IS42S16100E, IS45S16100E
Read Cycle / Byte Operation
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
tAS
tAH
ROW
AUTOPRE
BANK0AND1
NOPRE
BANK0OR1
BANK1
BANK0
BANK1
ROW
ROW
A10
tAH
tAS
A11
(1)
COLUMNm
ROW
BANK1
BANK0
tCS
BANK0
tCH
tQMD
BANK1
BANK0
UDQM
tQMD
tCS
tCH
LDQM
tAC
tLZ
DQ8-15
tAC
tHZ
tOH
tLZ
DOUT m+2
DOUT m
tAC
tLZ
DQ0-7
tCAC
tOH
DOUT m+3
tAC
tOH
tOH
DOUT m+1
DOUT m
tRCD
tAC
tOH
tQMD
tRQL
tRAS
tRCD
tRP
tRAS
tRC
tRC
<ACT>
<READ>
<READA>
<MASKU>
<ENBU,MASKL> <MASKL>
<PRE>
<PALL>
<ACT>
Undefined
CAS latency = 2, burst length = 4
Don'tCare
Note 1: A8,A9 = Don’t Care.
58
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Write Cycle / Byte Operation
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
tAS
tAH
ROW
AUTOPRE
BANK0AND1
NOPRE
BANK0OR1
BANK1
BANK0
BANK1
ROW
ROW
A10
tAH
tAS
A11
(1)
COLUMNm
ROW
BANK1
BANK0
tCS
BANK0
tCH
BANK1
BANK0
UDQM
tCS
tCH
tDS
tDS
tDH
LDQM
DQ8-15
DIN m
tDH
tDS
DIN m+1
DIN m+3
tDH
tDS
DQ0-7
tDH
tDH
tDS
DIN m
DIN m+3
tRCD
tDPL
tRCD
tRAS
tRP
tRAS
tRC
tRC
<ACT>
<WRIT>
<WRITA>
<MASKL>
<MASK>
<ENB>
<PRE>
<PALL>
<ACT>
Undefined
CAS latency = 2, burst length = 4
Don'tCare
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
59
IS42S16100E, IS45S16100E
Read Cycle, Write Cycle / Burst Read, Single Write
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
tAS
(1)
COLUMNn
tAH
tAH
tAS
AUTOPRE
BANK0AND1
NOPRE
BANK0OR1
BANK1
BANK1
BANK0
BANK0
NOPRE
ROW
A10
A11
(1)
COLUMNm
ROW
BANK1
BANK1
BANK0
tCS
BANK0
tCH
tQMD
DQM
tAC
tAC
tOH
DQ
DOUT m
tLZ
tRCD
tAC
tAC
tDS
tOH
tOH
tOH
DOUT m+1
DOUT m+2
DOUT m+3
tDH
DIN n
tHZ
tCAC
tDPL
tRAS
tRP
tRC
<ACT>
<READ>
<WRIT>
<WRITA>
<PRE>
<PALL>
Undefined
CAS latency = 2, burst length = 4
Don'tCare
Note 1: A8,A9 = Don’t Care.
60
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Read Cycle
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
tAS
BANK0AND1
NOPRE
tAH
tAS
A11
ROW
tAH
ROW
A10
(1)
COLUMNm
ROW
ROW
BANK0OR1
BANK1
BANK1
BANK1
BANK1
BANK0
BANK0
tCS
tCH BANK0
tQMD
BANK0
DQM
tAC
tAC
tOH
DQ
DOUT m
tAC
tAC
tOH
tOH
tOH
DOUT m+1
DOUT m+2
DOUT m+3
tLZ
tRCD
tCAC
tRQL
tRAS
tHZ
tRCD
tRAS
tRP
tRC
tRC
<ACT>
<READ>
<PRE>
<PALL>
<ACT>
Undefined
CAS latency = 3, burst length = 4
Don'tCare
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
61
IS42S16100E, IS45S16100E
Read Cycle / Auto-Precharge
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
A0-A9
tAH
ROW
AUTOPRE
ROW
ROW
A10
tAH
tAS
A11
COLUMN
ROW
tAS
(1)
BANK1
BANK1
BANK1
BANK0
BANK0
tCS
BANK0
tCH
tQMD
DQM
tAC
tAC
tOH
DQ
DOUT m
tAC
tAC
tOH
tOH
tOH
DOUT m+1
DOUT m+2
DOUT m+3
tLZ
tRCD
tCAC
tRAS
tPQL
tHZ
tRCD
tRAS
tRP
tRC
tRC
<ACT>
<READA>
<ACT>
Undefined
CAS latency = 3, burst length = 4
Note 1: A8,A9 = Don’t Care.
T0
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
CS
tCS
62
RAS
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
CAS
tCS
IS42S16100E, IS45S16100E
Read Cycle / Full Page
T0
T1
T2
T3
T4
T5
T6
T7
T8
T262
T263
T264
T265
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
tAS
tAH
NOPRE
ROW
A10
BANK0OR1
tAH
tAS
A11
(1)
COLUMN
ROW
BANK0
BANK0
BANK0
tCH
tCS
DQM
tAC
tAC
tOH
DQ
DOUT 0m
tAC
tOH
DOUT 0m+1
tAC
tOH
DOUT 0m-1
tAC
tOH
tOH
DOUT 0m
DOUT 0m+1
tLZ
tRCD
(BANK0)
tRAS
(BANK0)
tRC
(BANK0)
<ACT0>
(BANK0)
<READ0>
tHZ
tRBD
tCAC
tRP
(BANK0)
<BST>
<PRE0>
Undefined
CAS latency = 3, burst length = full page
Don'tCare
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
63
IS42S16100E, IS45S16100E
Read Cycle / Ping Pong Operation (Bank Switching)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
ROW
COLUMN
COLUMN
AUTOPRE
AUTOPRE
NOPRE
NOPRE
BANK0OR1
BANK0OR1
BANK0
BANK1
BANK0
BANK1
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
ROW
tAS
tAH
ROW
tAH
tAS
A11
ROW
ROW
ROW
A10
(1)
(1)
BANK0
BANK1
tCS
BANK0
tCH
tQMD
DQM
tAC
tLZ
tAC
tOH
DQ
DOUT 0m
tRRD
(BANK0TO1)
tRCD
(BANK0)
tCAC
tOH
DOUT 1m
DOUT 1m+1
tHZ
tRQL
(BANK0)
tRP
(BANK1)
tRC
(BANK1)
<READ0>
<READA0>
tRCD
(BANK0)
tRAS
(BANK0)
(BANK0)
tRP
(BANK0)
tRAS
<ACT1>
DOUT 0m+1
tAC
tOH
tCAC
(BANK1)
tRCD
(BANK1)
tRAS
(BANK0)
tRC
(BANK0)
<ACT0>
tAC
tOH
<READ1>
<READA1>
tRC
(BANK0)
(BANK1)
<PRE0>
<PRE1>
<ACT0>
Undefined
CAS latency = 3, burst length = 2
Don'tCare
Note 1: A8,A9 = Don’t Care.
64
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Write Cycle
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
tAS
COLUMN
ROW
BANK0AND1
tAH
NOPRE
ROW
A10
tAH
tAS
A11
(1)
ROW
ROW
BANK1
BANK0OR1
BANK1
BANK0
BANK1
BANK0
BANK0
BANK1
BANK0
tCS
tCH
DQM
tDS
tDH tDS
DIN m
DQ
tDH tDS
DIN m+1
tDH tDS
DIN m+2
tDH
DIN m+3
tDPL
tRCD
tRAS
tRCD
tRP
tRAS
tRC
<ACT>
tRC
<WRIT>
<PRE>
<PALL>
<ACT>
Undefined
CAS latency = 3, burst length = 4
Don'tCare
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
65
IS42S16100E, IS45S16100E
Write Cycle / Auto-Precharge
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
tAS
COLUMN
ROW
AUTOPRE
tAH
ROW
A10
ROW
tAH
tAS
A11
(1)
ROW
BANK1
BANK1
BANK1
BANK0
BANK0
tCS
BANK0
tCH
DQM
tDS
tDH tDS
DIN m
DQ
tDH tDS
DIN m+1
tDH tDS
DIN m+2
tDH
DIN m+3
tDAL
tRCD
tRAS
tRCD
tRP
tRAS
tRC
<ACT>
tRC
<WRITA>
<ACT>
Undefined
CAS latency = 3, burst length = 4
Don'tCare
Note 1: A8,A9 = Don’t Care.
66
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Write Cycle / Full Page
T0
T1
T2
T3
T4
T5
T6
T259
T260
T261
T262
T263
T264
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
tAS
tAH
NOPRE
ROW
A10
BANK0OR1
tAH
tAS
A11
(1)
COLUMN
ROW
BANK0
BANK0
BANK0
tCH
tCS
DQM
tDS
DQ
tDH tDS
DIN 0m
tDH tDS
DIN 0m+1
tDH tDS
DIN 0m+2
tDH
DIN0m-1
DIN 0m
tDPL
tRCD
tRAS
tRP
tRC
<ACT0>
<WRIT0>
<BST>
<PRE0>
Undefined
CAS latency = 3, burst length = full page
Don'tCare
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
67
IS42S16100E, IS45S16100E
Write Cycle / Ping-Pong Operation (Bank Switching)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
ROW
COLUMN
tAS
ROW
COLUMN
AUTOPRE
AUTOPRE
tAH
ROW
A10
ROW
ROW
NOPRE
tAH
tAS
A11
(1)
(1)
ROW
BANK0
BANK0
BANK1
NOPRE
BANK0OR1
BANK1
BANK0
BANK1
BANK0
tCH
tCS
DQM
tDS
tDH tDS
DIN 0m
DQ
tDH tDS
DIN 0m+1
tRRD
(BANK0TO1)
tRCD
(BANK0)
tDH tDS
DIN 0m+2
tRCD
tDH tDS
DIN 0m+3
tDH tDS
DIN 1m
tDH tDS
DIN 1m+1
tDH tDS
DIN 1m+2
tDH
DIN 1m+3
tDPL
(BANK0)
tDPL
tRCD
(BANK1)
tRP
tRAS
tRAS
(BANK0)
(BANK0)
tRC
(BANK0)
tRC
tRAS
(BANK1)
tRC
(BANK1)
<ACT0>
<WRIT0>
<WRITA0>
<ACT1>
<WRIT1>
<WRITA1>
<PRE0>
<ACT0>
Undefined
CAS latency = 3, burst length = 4
Don'tCare
Note 1: A8,A9 = Don’t Care.
68
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Read Cycle / Page Mode
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
tAS
(1)
COLUMNo
NOPRE
tAH
tAS
A11
(1)
COLUMNn
tAH
ROW
A10
(1)
COLUMNm
ROW
BANK1
BANK0
BANK0AND1
NOPRE
BANK0OR1
BANK1
BANK0
BANK1
BANK0
NOPRE
BANK1
BANK1
BANK0
AUTOPRE
tCS
tQMD
BANK0
tCH
DQM
tAC
tLZ
tAC
tOH
DQ
DOUT m
tRCD
tRAS
tRC
<ACT>
DOUT m+1
<READ>
tAC
tAC
tAC
tOH
tOH
tOH
DOUT n
DOUT n+1
DOUTo
tCAC
tCAC
tCAC
<READ>
tAC
tOH
tOH
DOUTo+1
tHZ
tRQL
tRP
<READ>
<READA>
<PRE>
<PALL>
Undefined
CAS latency = 3, burst length = 2
Don'tCare
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
69
IS42S16100E, IS45S16100E
Read Cycle / Page Mode; Data Masking
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T11
T10
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
ROW
tAS
(1)
COLUMNo
NOPRE
AUTOPRE
BANK0AND1
NOPRE
BANK0OR1
BANK1
BANK0
NOPRE
tAH
tAS
A11
(1)
COLUMNn
tAH
ROW
A10
(1)
COLUMNm
BANK1
BANK0
BANK1
BANK1
BANK1
BANK0
BANK0
BANK0
tCS
tQMD
tCH
tQMD
DQM
tAC
tAC
tOH
tLZ
DQ
DOUT m
tRCD
tRAS
tRC
<ACT>
tCAC
tCAC
<READ>
<READ>
tAC
tOH
tAC
tAC
tOH
DOUT m+1
DOUT n
tOH
tOH
DOUTo
DOUTo+1
tHZ
tCAC
tRQL
tRP
<READ,MASK>
<READA,MASK>
<ENB>
<PRE>
<PALL>
Undefined
CAS latency = 3, burst length = 2
Don'tCare
Note 1: A8,A9 = Don’t Care.
70
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Write Cycle / Page Mode
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
ROW
tAS
(1)
(1)
COLUMNn
COLUMNo
tAH
ROW
A10
tAH
tAS
A11
(1)
COLUMNm
AUTOPRE
BANK0AND1
NOPRE
NOPRE
BANK1
BANK1
NOPRE
BANK0OR1
BANK1
BANK0
BANK0
BANK0
BANK1
BANK0
BANK0
tCS
tCH
DQM
tDS
tDH tDS
DIN m
DQ
tDH tDS
DIN m+1
tDH
tDS
DINn
tDH tDS
DINo
tRCD
tRAS
tRC
<ACT>
tDH
DINo+1
tDPL
tRP
<WRIT>
<WRIT>
<MASK>
<WRIT>
<WRITA>
<PRE>
<PALL>
Undefined
CAS latency = 3, burst length = 2
Don'tCare
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
71
IS42S16100E, IS45S16100E
Write Cycle / Page Mode; Data Masking
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
ROW
tAS
(1)
(1)
COLUMNn
COLUMNo
tAH
NOPRE
ROW
A10
tAH
tAS
A11
(1)
COLUMNm
BANK1
BANK0
tCS
AUTOPRE
BANK0AND1
NOPRE
BANK1OR0
NOPRE
BANK1
BANK1
BANK0
BANK0
BANK1
BANK0
tCH
BANK1
BANK0
DQM
tDS
tDH tDS
DIN m
DQ
tDH tDS
DIN m+1
tDH
tDS
DINn
tDH tDS
DINo
tRCD
tRAS
tRC
<ACT>
tDH
DINo+1
tDPL
tRP
<WRIT>
<WRIT>
<MASK>
<WRIT>
<WRITA>
<PRE>
<PALL>
Undefined
CAS latency = 3, burst length = 2
Don'tCare
Note 1: A8,A9 = Don’t Care.
72
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Read Cycle / Clock Suspend
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCKS
tCL
tCKH
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
A0-A9
COLUMNm
ROW
tAS
tAH
AUTOPRE
BANK0AND1
tAH
NOPRE
BANK0OR1
BANK1
BANK0
BANK1
ROW
A10
tAS
A11
(1)
BANK1
BANK0
tCS
BANK0
tCH
tQMD
DQM
tAC
tAC
tOH
DQ
tOH
DOUT m
DOUT m+1
tLZ
tRCD
tHZ
tCAC
tRAS
tRP
tRC
<ACT>
<READ>
<READA>
<SPND>
<SPND>
<PRE>
<PALL>
Undefined
CAS latency = 3, burst length = 2
Don'tCare
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
73
IS42S16100E, IS45S16100E
Write Cycle / Clock Suspend
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
tCKS
tCKH
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
A0-A9
tAS
ROW
BANK0AND1
tAH
AUTOPRE
tAH
NOPRE
BANK0OR1
BANK1
BANK1
BANK0
BANK1
BANK0
BANK0
ROW
ROW
A10
tAS
A11
(1)
COLUMNm
ROW
BANK1
BANK0
tCS
tCH
DQM
tDS
tDH
DIN m
DQ
tRCD
tDS
tDH
DIN m+1
tDPL
tRAS
tRAS
tRP
tRC
<ACT>
tRC
<WRIT,SPND> <SPND>
<WRITA,SPND>
<PRE>
<PALL>
<ACT>
Undefined
CAS latency = 3, burst length = 2
Don'tCare
Note 1: A8,A9 = Don’t Care.
74
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Read Cycle / Precharge Termination
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
tAS
ROW
tAH
ROW
ROW
A10
tAH
tAS
A11
(1)
COLUMNm
ROW
BANK0
NOPRE
BANK0OR1
BANK0
BANK0
tCS
BANK1
BANK0
tCH
tQMD
DQM
tAC
tAC
tOH
DQ
DOUT m
tAC
tOH
tHZ
tOH
DOUT m+1
DOUT m+2
tLZ
tRCD
tCAC
tRAS
tRQL
tRCD
tRP
tRAS
tRC
<ACT0>
tRP
<READ0>
<PRE0>
<ACT>
Undefined
CAS latency = 3, burst length = 2
Don'tCare
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
75
IS42S16100E, IS45S16100E
Write Cycle / Precharge Termination
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
tAS
tAH
RAS
CAS
WE
A0-A9
COLUMNm
ROW
tAS
ROW
tAH
ROW
ROW
A10
tAH
tAS
A11
(1)
BANK0
NOPRE
BANK0OR1
BANK0
BANK0
tCS
tCS
tCH
BANK1
BANK0
tCH
DQM
tDH
tDS
tDS
DQ
DIN 0m
tDH
tDS
DIN 0m+1
tDH
DIN 0m+2
tRCD
tRCD
tRAS
tRAS
tRP
tRC
<ACT0>
tRP
<WRIT0>
<PRE0>
<ACT>
Undefined
CAS latency = 3, burst length = 4
Don'tCare
Note 1: A8,A9 = Don’t Care.
76
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Read Cycle / Byte Operation
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
tAS
ROW
tAH
AUTOPRE
BANK0AND1
tAH
NOPRE
BANK0OR1
BANK1
BANK1
BANK1
BANK0
BANK0
ROW
ROW
A10
tAS
A11
(1)
COLUMNm
ROW
tCS
tQMD
tCS
tQMD
BANK1
BANK0
tCH
BANK0
UDQM
tCH
LDQM
tAC
tLZ
DQ8-15
tAC
tHZ
tOH
tAC
tLZ
DOUT m+2
DOUT m
tAC
tLZ
DQ0-7
tRCD
tCAC
tAC
tHZ
tOH
DOUT m+3
tHZ
tOH
tOH
DOUT m
DOUT m+1
tQMD
tRAS
tRQL
tRCD
tRP
tRAS
tRP
tRC
<ACT>
<READ>
<READA>
<MASKU>
<ENBU,MASKL> <MASKL>
<PRE>
<PALL>
<ACT>
Undefined
CAS latency = 3, burst length = 4
Don'tCare
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
77
IS42S16100E, IS45S16100E
Write Cycle / Byte Operation
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
tAS
tAH
ROW
AUTOPRE
BANK0AND1
NOPRE
BANK0OR1
BANK1
BANK0
BANK1
ROW
ROW
A10
tAH
tAS
A11
(1)
COLUMNm
ROW
BANK1
BANK0
tCS
BANK0
tCH
BANK1
BANK0
UDQM
tCS
tCH
tDS
tDS
tDH
LDQM
DQ8-15
DINm
tDH
tDS
DIN m+1
DIN m+3
tDH
tDS
DQ0-7
tDH
tDH
tDS
DINm
DIN m+3
tRCD
tDPL
tRCD
tRAS
tRP
tRAS
tRP
tRC
<ACT>
<WRIT>
<WRITA>
<MASKL>
<MASK>
<ENB>
<PRE>
<PALL>
<ACT>
Undefined
CAS latency = 3, burst length = 4
Don'tCare
Note 1: A8,A9 = Don’t Care.
78
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Read Cycle, Write Cycle / Burst Read, Single Write
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T11
T10
T12
CLK
tCKS
tCK
tCS
tCKA
tCH
CKE
tCHI
tCL
CS
tCS
tCH
tCS
tCH
tCS
tCH
RAS
CAS
WE
tAS
A0-A9
tAH
tAS
AUTOPRE
BANK0AND1
NOPRE
BANK0OR1
BANK1
BANK1
NOPRE
tAH
tAS
A11
COLUMNn
tAH
ROW
A10
(1)
(1)
COLUMNm
ROW
BANK1
BANK1
BANK0
BANK0
tCS
BANK0
tQMD
tCH
BANK0
DQM
tAC
DQ
tLZ
tRC
tAC
tDS
tOH
tOH
DOUT m
DOUT m+1
tDH
DIN n
tHZ
tCAC
tDPL
tRAS
tRP
tRC
<ACT>
<READ>
<WRIT>
<WRITA>
<PRE>
<PALL>
Undefined
CAS latency = 3, burst length = 2
Don'tCare
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com Rev. D
08/24/09
79
IS42S16100E, IS45S16100E
ORDERING INFORMATION
Commercial Range: 0°C to 70°C
Frequency
Speed (ns)
200 MHz
5
166 MHz
6
143MHz
7
Order Part No.
IS42S16100E-5T
IS42S16100E-5TL
IS42S16100E-5BL
IS42S16100E-6T
IS42S16100E-6TL
IS42S16100E-6BL
IS42S16100E-7T
IS42S16100E-7TL
IS42S16100E-7BL
Package
400-mil TSOP II
400-mil TSOP II, Lead-free
60-ball BGA, Lead-free
400-mil TSOP II
400-mil TSOP II, Lead-free
60-ball BGA, Lead-free
400-mil TSOP II
400-mil TSOP II, Lead-free
60-ball BGA, Lead-free
Order Part No.
IS42S16100E-6TLI
IS42S16100E-6BLI
IS42S16100E-7TLI
IS42S16100E-7BLI
Package
400-mil TSOP II, Lead-free
60-ball BGA, Lead-free
400-mil TSOP II, Lead-free
60-ball BGA, Lea-free
Industrial Range: -40°C to +85°C
Frequency
Speed (ns)
166 MHz
6
143MHz
7
Please contact the Product Manager for leaded parts support.
ORDERING INFORMATION
Automotive Range: -40°C to +85°C
Frequency
166 MHz
143MHz
Speed (ns)
6
7
Order Part No.
IS45S16100E-6TLA1
IS45S16100E-7TLA1
IS45S16100E-7BLA1
Package
400-mil TSOP II, Lead-free
400-mil TSOP II, Lead-free 60-ball BGA, Lead-free
Automotive Range: -40°C to +105°C
80
Frequency
143MHz
Speed (ns)
7
Order Part No.
IS45S16100E-7TLA2
IS45S16100E-7BLA2
Package
400-mil TSOP II, Lead-free 60-ball BGA, Lead-free
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09
IS42S16100E, IS45S16100E
Θ
NoTe :
1. controlling dimension : mm
Θ
2. dimension d and e1 do not include mold protrusion .
3. dimension b does not include dambar protrusion/intrusion.
09/01/2006
Rev. D
08/24/09
4. formed leads shall be planar with respect to one another within 0.1mm
at the seating plane after final test.
Package Outline
81
Integrated Silicon Solution, Inc. — www.issi.com IS42S16100E, IS45S16100E
82
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/24/09