TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DEVICES LEVELS 2N6849 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage VDS -100 Vdc Gate – Source Voltage VGS ± 20 Vdc ID1 -6.5 Adc ID2 -4.1 Adc Continuous Drain Current TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation Ptl Drain to Source On State Resistance Rds(on) Operating & Storage Temperature Top, Tstg 25 (1) W 0.3 (2) Ω -55 to +150 °C TO-205AF (formerly TO-39) Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C (2) VGS = -10Vdc, ID = -4.1A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Drain-Source Breakdown Voltage VGS = 0V, ID = -1mAdc V(BR)DSS -100 VGS(th)1 VGS(th)2 VGS(th)3 -2.0 -1.0 -5.0 Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = -0.25mA VDS ≥ VGS, ID = -0.25mA, Tj = +125°C VDS ≥ VGS, ID = -0.25mA, Tj = -55°C Max. Unit Vdc -4.0 Vdc Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C IGSS1 IGSS2 ±100 ±200 nAdc Drain Current VGS = 0V, VDS = -80V VGS = 0V, VDS = -80V, Tj = +125°C IDSS1 IDSS2 -25 -0.25 µAdc mAdc rDS(on)1 rDS(on)2 0.3 0.32 Ω Ω rDS(on)3 0.54 Ω VSD -4.3 Vdc Static Drain-Source On-State Resistance VGS = -10V, ID = -4.1A pulsed VGS = -10V, ID = -6.5A pulsed Tj = -125°C VGS = -10V, ID = -4.1A pulsed Diode Forward Voltage VGS = 0V, ID = -6.5A pulsed T4-LDS-0009 Rev. 1 (072018) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge Symbol VGS = -10V, ID = -6.5A VDS = -50V Min. Qg(on) Qgs Qgd Max. 34.8 6.8 23.1 Unit nC SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time ID = -6.5A, VGS = -10Vdc, Gate drive impedance = 7.5Ω, VDD = -40Vdc Diode Reverse Recovery Time di/dt ≤ -100A/µs, VDD ≤ -50V, IF = -6.5A T4-LDS-0009 Rev. 1 (072018) Min. Max. td(on) tr td(off) tf 60 140 140 140 trr 250 Unit ns ns Page 2 of 2