RJK0316DSP Silicon N Channel Power MOS FET Power Switching REJ03G1598-0300 Rev.3.00 Oct 16, 2007 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>) 8 5 6 7 8 D D D D 5 76 12 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G 34 S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID Note1 ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 θch-a Note3 Tch Tstg Ratings 30 +16/–12 16 128 16 16 25.6 2.0 62.5 150 –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s REJ03G1598-0300 Rev.3.00 Oct 16, 2007 Page 1 of 7 Unit V V A A A A mJ W °C/W °C °C RJK0316DSP Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Notes: 4. Pulse test REJ03G1598-0300 Rev.3.00 Oct 16, 2007 Page 2 of 7 Min 30 — — 1.2 — — — — — — — — — — — — — Typ — — — — 5.3 7.2 40 2080 650 100 1.4 13.8 5.3 2.9 6.5 5.0 45 Max — ± 0.1 1 2.5 6.4 9.4 — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns — — — 4.0 0.81 30 — 1.06 — ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = +16/-12 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 8 A, VGS = 10 V Note4 ID = 8 A, VGS = 4.5 V Note4 ID = 8 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 16 A VGS = 10 V, ID = 8 A VDD ≅ 10 V RL = 1.25 Ω Rg = 4.7 Ω IF = 16 A, VGS = 0 Note4 IF = 16 A, VGS = 0 diF/ dt = 100 A/ µs RJK0316DSP Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 3.0 500 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW ≤ 10 s 10 µs 100 Drain Current ID (A) Channel Dissipation Pch (W) 4.0 2.0 1.0 PW 10 DC 10 1m 0µ s =1 s 0m s Op era tio 1 Operation in n( PW this area is limited by RDS(on) ≤ 1 Note 0s 5 ) 0.1 Ta = 25 °C 1 shot Pulse 0 50 100 150 0.01 0.1 200 0.3 1 3 10 30 100 Drain to Source Voltage VDS (V) Ambient Temperature Ta (°C) Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Output Characteristics 40 50 10 V 3.0 V V DS = 10 V Pulse Test 2.8 V 7V 30 2.6 V 20 VGS = 2.4 V 10 Drain Current ID (A) Drain Current ID (A) 50 Typical Transfer Characteristics 40 30 25°C 20 Tc = 75°C –25°C 10 Pulse Test 2 4 6 8 0 10 1 2 3 5 4 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 200 Pulse Test 160 120 80 ID = 10 A 40 5A 2A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) REJ03G1598-0300 Rev.3.00 Oct 16, 2007 Page 3 of 7 Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) 0 100 Pulse Test 50 20 10 VGS = 4.5 V 5 10 V 2 1 1 3 10 30 100 300 Drain Current ID (A) 1000 RJK0316DSP Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source On State Resistance RDS(on) (mΩ) Static Drain to Source on State Resistance vs. Temperature 12 Pulse Test 20 A 5 A, 10 A 10 8 VGS = 4.5 V 6 ID = 5 A, 10 A, 20 A 4 10 V 2 –25 0 25 50 75 100 125 150 Tc = –25°C 100 30 10 75°C 25°C 3 1 VDS = 10 V Pulse Test 0.3 0.1 0.1 0.3 1 3 10 30 Drain Current ID (A) Body Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 100 10000 Capacitance C (pF) 3000 50 20 50 0.3 1 3 10 30 300 Crss 100 VGS = 0 f = 1 MHz 10 0 5 10 15 20 25 30 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 16 VDD = 25 V 10 V 5V VDS 12 20 8 10 4 VDD = 25 V 10 V 5V 10 1000 20 ID = 16 A VGS 0 Coss Reverse Drain Current IDR (A) 40 30 1000 100 20 30 40 Gate Charge Qg (nc) REJ03G1598-0300 Rev.3.00 Oct 16, 2007 Page 4 of 7 0 50 Switching Time t (ns) 10 0.1 Ciss 30 di/dt = 100 A/µs VGS = 0, Ta = 25°C Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) 300 Case Temperature Tc (°C) 100 Drain to Source Voltage VDS (V) 1000 300 100 td(off) 30 tf 10 3 1 0.1 tr td(on) VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 0.3 1 3 10 30 Drain Current ID (A) 100 RJK0316DSP Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 50 10 V 5V 40 30 VGS = –5, 0 V 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 50 IAP = 16 A VDD = 15 V duty < 0.1 % Rg > 50 Ω 40 30 20 10 0 25 Source to Drain Voltage VSD (V) 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 1 0.1 D=1 0.5 0.2 0.1 0.05 0.02 θch - f(t) = γs (t) x θch - f θch - f = 83.3°C/W, Ta = 25°C When using the glass epoxy board (FR4 40x40x1.6 mm) 0.01 0.01 0.001 t sho PDM lse pu D= 1 PW T PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Avalanche Test Circuit VDS Monitor Avalanche Waveform EAR = L 1 2 L • IAP2 • VDSS VDSS – VDD IAP Monitor Rg Vin 15 V D. U. T V(BR)DSS IAP VDD VDS ID 50 Ω 0 REJ03G1598-0300 Rev.3.00 Oct 16, 2007 Page 5 of 7 VDD RJK0316DSP Switching Time Test Circuit Vout Monitor Vin Monitor Rg Switching Time Waveform 90% D.U.T. RL Vin Vin 10 V VDS = 10 V Vout 10% 10% 90% td(on) REJ03G1598-0300 Rev.3.00 Oct 16, 2007 Page 6 of 7 tr 10% 90% td(off) tf RJK0316DSP Package Dimensions JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g F Package Name SOP-8 *1 D bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) * 3 bp x M e NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Dimension in Millimeters Symbol Min D E A2 A1 A bp b1 c c1 A1 A L1 L y HE e x y Z L L1 Detail F Nom Max 4.90 5.3 3.95 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 0° 8° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Ordering Information Part Name RJK0316DSP-00-J0 Note: Quantity 2500 pcs Shipping Container Taping For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. REJ03G1598-0300 Rev.3.00 Oct 16, 2007 Page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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