IXYS DE150

DE150-102N02A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
1000
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
Tc = 25°C
2
A
IDM
Tc = 25°C, pulse width limited by TJM
12
A
IAR
Tc = 25°C
1.5
A
EAR
Tc = 25°C
6
mJ
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
3
V/ns
dv/dt
>200
V/ns
200
W
105
W
3.5
W
RthJC
0.71
C/W
RthJHS
1.41
C/W
IS = 0
PDC
PDHS
Tc = 25°C
Derate .7W/°C above 25°C
PDAMB
Tc = 25°C
Symbol
Test Conditions
TJ = 25°C unless otherwise specified
VDSS
VGS = 0 V, ID = 3 ma
VGS(th)
VDS = VGS, ID = 4 ma
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
RDS(on)
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
gfs
VDS = 15 V, ID = 0.5ID25, pulse test
V
2.5
0.8
1.6mm (0.063 in) from case for 10 s
ID25
=
2A
RDS(on)
=
7.8 Ω
PDC
=
200W
DRAIN
GATE
SG1
SG2
SD1
SD2
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
IXYS advanced low Qg process
4.5
V
±100
nA
50
500
µA
µA
7.8
Ω
S
Advantages
2
+175
-55
Tstg
1000 V
•
•
−
−
•
•
•
175
TJM
Weight
max.
1000
-55
TJ
TL
typ.
=
Features
Characteristic Values
min.
VDSS
+175
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
°C
• Optimized for RF and high speed
°C
• Easy to mount—no insulators needed
• High power density
°C
300
°C
2
g
switching at frequencies to 30MHz
DE150-102N02A
RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
max.
Ciss
Coss
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
500
pF
150
pF
3
pF
16
pF
4
ns
4
ns
4
ns
4
ns
23
nC
4.5
nC
14
nC
Crss
CStray
Back Metal to any Pin
Td(on)
Ton
Td(off)
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 Ω (External)
Toff
Qg(on)
Qgs
Ω
5
RG
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
Qgd
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
Test Conditions
min.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
typ.
max.
1.5
A
12
A
1.8
V
710
Trr
ns
For detailed device mounting and installation instructions, see the “DESeries MOSFET Mounting Instructions” technical note on IXYS RF’s web
site at www.ixysrf.com/Technical_Support/App_notes.html
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
5,640,045
DE150-102N02A
RF Power MOSFET
10000
Ciss
Coss
Crss
Capacitance in pF
1000
100
10
1
0
100
200
300
400
500
600
Vds in Volts
Capacitances vs Vds
700
800
900
1000
DE150-102N02A
RF Power MOSFET
102N02A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms
LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term.
The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay
are adjusted via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
*SYM=POWMOSN
.SUBCKT 102N02A 10 20 30
* TERMINALS: D G S
* 1000 Volt 1.4 Amp 7.8 ohm N-Channel Power MOSFET 10-30-2000
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 4.0
DON 6 2 D1
ROF 5 7 2.0
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 500Pf
RD 4 1 7.8
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3 KP=.3)
.MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.2 TT=1N)
.MODEL D2 D (IS=.5F CJO=100P BV=1000 M=.6 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=150P BV=1000 M=.35 VJ=.6 TT=400N RS=10M)
.ENDS
Doc #9200-0239 Rev 3
© 2003 IXYS RF
An
IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: deiinfo@directedenergy.com
Web: http://www.directedenergy.com