IXYS DE150

DE150-101N09A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
Ideal for Class C, D, & E Applications
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
100
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
100
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
Tc = 25°C
9.0
A
IDM
Tc = 25°C, pulse width limited by TJM
54
A
IAR
Tc = 25°C
14
A
EAR
Tc = 25°C
7.5
mJ
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
5.5
V/ns
dv/dt
>200
V/ns
200
W
80
W
3.5
W
RthJC
0.74
C/W
RthJHS
1.50
C/W
IS = 0
VDSS
=
100 V
ID25
=
9.0 A
RDS(on)
≤
0.16 Ω
PDC
=
200 W
DRAIN
PDC
PDHS
Tc = 25°C
Derate 4.4W/°C above 25°C
PDAMB
Tc = 25°C
Symbol
Test Conditions
TJ = 25°C unless otherwise specified
Characteristic Values
min.
typ.
VDSS
VGS = 0 V, ID = 3 ma
100
VGS(th)
VDS = VGS, ID = 4 ma
2
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
RDS(on)
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
gfs
VDS = 15 V, ID = 0.5ID25, pulse test
2.5
2.8
V
±100
nA
25
250
µA
µA
0.16
Ω
3.0
S
+175
175
TJM
-55
Tstg
Weight
V
-55
TJ
TL
max.
1.6mm(0.063 in) from case for 10 s
°C
°C
+175
°C
300
°C
2
g
GATE
SG1
SG2
SD1
SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
•
•
−
−
•
•
•
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to >100MHz
• Easy to mount—no insulators needed
• High power density
DE150-101N09A
RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
max.
5
RG
Ciss
Coss
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
Crss
Cstray
Back Metal to any Pin
Td(on)
Ton
Td(off)
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 Ω (External)
Toff
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25 , Ig = 3 ma
Qgd
Source-Drain Diode
(TJ = 25°C unless otherwise specified)
Ω
700
pF
200
pF
30
pF
16
pF
4
ns
4
ns
4
ns
4
ns
22
nC
3.4
nC
9.1
nC
Characteristic Values
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
min.
typ.
max.
9.0
A
54
A
1.5
V
300
Trr
ns
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice.
For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the
IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,860,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
5,640,045
DE150-101N09A
RF Power MOSFET
Fig. 1
Fig. 2
Typical Transfer Characteristics
Typical Output Characteristics
VDS = 30V PW = 20µS
20
55
7V
to
10V
50
ID, Drain Currnet (A)
ID , Drain Current (A)
45
40
35
30
25
20
15
6.5V
15
6V
10
5.5V
5V
5
10
4.5V
5
4V
0
0
3.5
4.5
5.5
6.5
7.5
8.5
0
9.5
5
10
25
30
35
40
45
50
Fig. 4
Gate Charge vs. Gate-to-Source Voltage
V DS = 50V ID = 4.5A
Extended Typical Output Characteristics
55
14
50
12
45
ID , Drain Currnet (A)
G ate-to-Source Voltage (V)
20
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to Source Voltage (V)
Fig. 3
15
10
8
6
4
40
35
30
Top
10V
9V
8V
7V
6.5V
6V
5.5V
5V
4.5V
Bottom
4V
25
20
15
10
2
5
0
0
5
10
15
20
25
30
0
35
0
Gate Charge (nC)
V DS vs.Capacitance
Capacitance (pf)
10000
Ciss
1000
Coss
100
Crss
10
1
10
20
30
40
20
30
VDS, Drain-to-Source Voltage (V)
Fig. 5
0
10
50
VDS Voltage (V)
60
70
80
40
50
DE150-101N09A
RF Power MOSFET
Fig. 6 Package Drawing
Source
Source
Gate
Drain
Source
Source
DE150-101N09A
RF Power MOSFET
101N09A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of
the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD.
Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased
diodes. This provides a varactor type response necessary for a high power device
model. The turn on delay and the turn off delay are adjusted via Ron and Roff.
Figure 7 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYSRF web site at
http://www.ixysrf.com/products/switch_mode.html
http://www.ixysrf.com/spice/de150-101n09a.html
Net List:
*SYM=POWMOSN
.SUBCKT 101N09A 10 20 30
* TERMINALS: D G S
* 100 Volt 9 Amp .16 ohm N-Channel Power MOSFET 10-30-2001
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 1.5
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 .7N
RD 4 1 .16
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .1N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=9.0)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=1100P BV=100 M=.5 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=300P BV=100 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0242 Rev 5
© 2009 IXYS RF
An
IXYS Company
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Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: sales@ixyscolorado.com
Web: http://www.ixyscolorado.com