DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Maximum Ratings VDSS = 1000 V ID25 = 8A RDS(on) = 1.5 Ω PDC = 590 W Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 8 A IDM Tc = 25°C, pulse width limited by TJM 48 A IAR Tc = 25°C 6 A EAR Tc = 25°C 20 mJ 5 V/ns dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω >200 V/ns 590 W 300 W SG1 3.0 W Features RthJC 0.25 C/W RthJHS 0.50 C/W IS = 0 PDC PDHS Tc = 25°C Derate 2.0W/°C above 25°C PDAMB Tc = 25°C Symbol Test Conditions min. VDSS VGS = 0 V, ID = 3 mA 1000 VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C gfs V 5.0 V ±100 nA 50 1 µA mA 2.5 4.3 7 0.50 -55 TJ +175 -55 Tstg 1.6mm (0.063 in) from case for 10 s SD1 SD2 • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages • Optimized for RF and high speed S • Easy to mount—no insulators needed • High power density °C °C +175 SG2 Ω C/W 175 TJM Weight max. 1.5 RthJHS TL typ. 3.5 VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS = 20 V, ID = 0.5ID25, pulse test GATE Characteristic Values TJ = 25°C unless otherwise specified RDS(on) DRAIN °C 300 °C 2 g switching at frequencies to 100MHz DE275-102N06A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. RG Ciss Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 Ω (External) Toff Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 IG = 3mA Qgd Source-Drain Diode max. 0.3 Ω 1650 pF 80 pF 18 pF 21 pF 3 ns 2 ns 4 ns 5 ns 46 nC 8 nC 25 nC Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2% min. Trr QRM typ. IF = IS, -di/dt = 100A/µs, VR = 100V IRM typ. max. 6 A 48 A 1.5 V 200 ns 0.6 µC 4 A CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 DE275-102N06A RF Power MOSFET Fig. 2 Typical Output Characteristics 24 22 20 18 16 14 12 10 8 6 4 2 0 Top Bottom Typical Transfer Characteristics V DS = 60V PW = 4uS 25 8-10V 7.5V 7V 6.5V 6V 5.5V 5V ID , Drain Current (A) ID, Drain Currnet (A) Fig. 1 20 15 10 5 0 0 10 20 30 40 50 5 60 8 9 10 Fig. 4 Gate-to-Source Voltage vs. Gate Charge V DS = 500 V ID = 4 A VD S vs. Capacitance 10000 16 Ciss 14 12 Capacitance (pF) G ate-to-Source Voltage (V) 7 VGS, Gate-to Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 3 6 10 8 6 4 1000 Coss 100 Crss 10 2 0 0 20 40 Gate Charge (nC) 60 80 1 0 200 400 VDS Voltage (V) 600 800 DE275-102N06A RF Power MOSFET Fig. 5 Package Drawing Source Source Gate Drain Source Source DE275-102N06A RF Power MOSFET Fig. 6 Class C Test Circuit 250V 13.56MHz Class C RF Test Circuit 1. T1- 2:1 Turns ratio, Ferronics binocular core P/N 12-365-J Primary - 2 turns of 26 AWG, single strand Teflon Wire. Secondary - 1 turn of braid with the primary wire run inside of it. 2. L1 - < 90nH, 5 turns, 0.25" id, 18 AWG single strand magnet wire, 0.55" long. 8. C4 - 60pf - 100pf air variable capacitor 9. L2 - 800nH, 6 turns, 1" id, 12 AWG single strand magnet wire, 0.85" long. 10. C5 - 250pf - 480pf mica compression capacitor, Sprague Goodman GME90901. 11. L3 - 5.4uH, 20 turns, 18 AWG single strand magnet wire, Micrometals core T-106-2, powered iron core. 3. C1 - 3000pf, 3 x 1000pf, ATC capacitors, P/N 102KW. 12. C6A - 0.02uf, 2 x 0.01uf ceramic disc capacitors. 4. C2 - 470pf, ATC capacitor, P/N 471JW. 5. R1 - 3.3 ohm, 3 x 10 ohm Caddock resistors, P/N MP850-10-10. 6. Q1 - DE275-102N06A 7. C3 - 5nf, 5 x .001uf, ceramic disc capacitors 13. C6B - 0.08uf, 8 x 0.01uf ceramic disc capacitors. 14. FB1 - 3 x 900mu ferrite beads on 18 AWG buss wire. DE275-102N06A RF Power MOSFET 102N06A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. 10 DRAIN Ld 4 Rd Lg Doff Roff D1crs D2crs 20 GATE 6 8 1 5 M3 2 Don Dcos Rds 3 Ron 7 Ls 30 SOURCE Figure 7 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the IXYSRF web site at http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/de275-102n06a.html Net List: *SYM=POWMOSN .SUBCKT 102N06A 10 20 30 * TERMINALS: D G S * 1000 Volt 6 Amp 1.6 Ohm N-Channel Power MOSFET M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 .5 DON 6 2 D1 ROF 5 7 1.0 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 1.9N RD 4 1 1.6 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=4 KP=2.3) .MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.2 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.6 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=400P BV=1000 M=.35 VJ=.6 TT=400N RS=10M) .ENDS Doc #9200-0221 Rev 5 © 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: [email protected] Web: http://www.ixyscolorado.com